Diodes Fabtech, Inc.

Fazia Hossain

Roman Hamerski

Chris Hruska

A rectifier device () comprising a multi-layer epitaxial film () and a rectifier and a transistor manufactured in the film (), wherein the transistor is oriented vertically relative to the plane of the rectifier. The rectifier and transistor are separated by a transition zone of inverted bias. The rectifier is a Schottky barrier rectifier, and the transistor is a JFET. More specifically, the device () comprises the film (), a trench (), a first region () associated with an upper portion of the trench (), and second region () associated with a lower portion. The interface between the p+ material of the second region () and the n material of the film () creates a p+/n junction. The device () has use in high frequency, low-loss power circuit applications in which high switching speed and low forward voltage drop are desirable.

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Lee's Summit, MO, United States of America

Fazia Hossain