Chinese Academy of Sciences

Fazhan Zhao

Xin Peng Liu

Zhengsheng Han

Jiajun Luo

Jianhui Bu

Mengxin Liu

The present disclosure discloses a power device including at least one vacuum packaged unit structure. The unit structure comprises a silicon substrate () and an emitter (), a light modulator () and a collector () formed on the silicon substrate (). On the one hand, the unified silicon-based process is compatible with the existing commercial process, so that it is easy for integration, simple for manufacture, and low in cost; on the other hand, the light modulator () is introduced and formed on the silicon substrate by a silicon-based process, which enhances field emission efficiency of the emitter (), offsets the inconsistency of distances between the tips of the emitters () and the collector () caused by unevenness of the emitters, and increases the process redundancy of the cold cathode emitter.

Power device and fabrication method thereof

The present invention provides an improved SRAM memory cell based on a DICE structure, which comprises following structures: four inverter structures formed through arranging PMOS transistors and NMOS transistors in series, wherein the part between the drains of a PMOS transistor and an NMOS transistor serves as a storage node; each storage node controls the gate voltage of an NMOS transistor of the other inverter structure and of a PMOS transistor of another inverter structure; a transmission structure consisting of four NMOS transistors, whose source, gate and drain are respectively connected with a bit line/bit bar line, a word line and a storage node. The use of an improved SRAM memory cell based on a DICE structure not only avoids such defects as small static noise margin and being prone to transmission error facing the traditional cell structures consisting of 6 transistors, but also resolves the problem that the current SRAM storage cells based on a DICE structure can easily be affected by the electrical level of storage nodes. This effectively improves reliability of storage cells.

Growing community of inventors

Beijing, China

Fazhan Zhao