Nxp B.v.

Fattah Haddad

Pascal Philippe

Adrianus Alphonsus Jozef Buijsman

Nicolas Jonathan Pulsford

Adrianus Bernardus Smolders

The electronic device () of the invention comprises a semiconductor device () and a low-pass filter (), which are present in a stacked configuration, and which together include a phase locked loop. The low-pass filter is preferably embodied by vertical trench capacitors, and preferably comprises a drift compensation part. The device () can be suitably provided in an open loop architecture. In a preferred embodiment, the low-pass filter comprises a large capacitor (C) and a small capacitor (C) connected in parallel, the large capacitor (C) being connected in series with a resistor (R).

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Nijmegen, Netherlands

Fattah Haddad