Applied Materials, Inc.

Faruk Gungor

Dien-Yeh Wu

Mei Yin Chang

Joseph Yudovsky

Srinivas Gandikota

Paul F Ma

Avgerinos V Gelatos

Chien-Teh Kao

Wei V Tang

Takashi Kuratomi

David Chu

David P Thompson

Seshadri Ganguli

Jeffrey W Anthis

Xinliang Lu

Xiaoxiong Yuan

Yu Wen Chang

Shih Chung Chen

Atif Noori

Jing Zhou

Hyman Lam

I-Cheng Chen

Muhammad M Rasheed

Yixiong Yang

Yu Lei

Xinyu Fu

Kazuya Daito

Joel M Huston

Anqing Cui

Hyman W H Lam

William Kuang

Vincent Kirchhoff

Bin V Cao

Gary U Keppers

Felix Rabinovich

Kyoung-Ho Bu

Vikas Jangra

Apparatus for processing a substrate are provided herein. In some embodiments a showerhead assembly includes a gas distribution plate having a plurality of apertures; a holder having a wall, an radially inwardly extending flange extending from a lower portion of the wall and coupled to the gas distribution plate, and a radially outwardly extending flange extending from an upper portion of the wall, wherein the wall has a thickness between about 0.015 inches and about 0.2 inches; and a heating apparatus disposed above and spaced apart from the gas distribution plate, wherein the heating apparatus includes a heater configured to heat the gas distribution plate.

Substrate processing chamber having heated showerhead assembly

Embodiments of an apparatus for gas delivery in a semiconductor processing system use a gas distribution plate that has a plurality of gas passageways where the passageways have surfaces with an average roughness of less than or equal to approximately 10 Ra. In some embodiments, the gas distribution plate has one or more internal fluid passageways that are capable of being fluidly coupled to one or more fluid sources to provide temperature control of the gas distribution plate. In some embodiments, the gas distribution plate has at least one internal cavity with at least one heatsink that may surround at least one of the plurality of gas passageways to provide, at least partial, temperature control of the gas distribution plate.

Apparatus and method for gas delivery in semiconductor process chambers

Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The inlet end is connectable to an inlet gas source and the outlet end is connectable with a vacuum source. Also provided are gas distribution apparatus with spiral delivery channels, intertwined spiral delivery channels, splitting delivery channels, merging delivery channels and shaped delivery channels in which an inlet end and outlet end are configured for rapid exchange of gas within the delivery channels.

Apparatus and method for providing uniform flow of gas

Methods and apparatus to selectively deposit metal films (e.g., titanium films) are described. One of the precursors is energized to form ions and radicals of the precursor. The precursors flow through separate channels of a dual channel gas distribution assembly to react in a processing region above a substrate.

Remote hydrogen plasma titanium deposition to enhance selectivity and film uniformity

Methods and apparatus for cleaning an atomic layer deposition chamber are provided herein. In some embodiments, a chamber lid assembly includes: a housing enclosing a central channel that extends along a central axis and has an upper portion and a lower portion; a lid plate coupled to the housing and having a contoured bottom surface that extends downwardly and outwardly from a central opening coupled to the lower portion of the central channel to a peripheral portion of the lid plate; a first heating element to heat the central channel; a second heating element to heat the bottom surface of the lid plate; a remote plasma source fluidly coupled to the central channel; and an isolation collar coupled between the remote plasma source and the housing, wherein the isolation collar has an inner channel extending through the isolation collar to fluidly couple the remote plasma source and the central channel.

Atomic layer deposition chamber with thermal lid

Embodiments of apparatus for sensing a level of a processing medium in a chemical delivery apparatus are provided herein. In some embodiments, a chemical delivery apparatus includes: a support structure; a container coupled to the support structure to hold a chemical precursor within an interior of the container; an excitation source configured to cause vibrations in an exterior surface of the container; and a measurement device configured to measure a frequency of the vibrations.

Apparatus for sensing a level of a processing medium in a delivery apparatus

Films comprising Aluminum, carbon and a metal, wherein the aluminum is present in an amount greater than about 16% by elemental content and the film has less than about 50% carbon. Methods of forming the films comprise exposing a substrate to a metal halide precursor, purging the metal halide precursor from the processing chamber and then exposing the substrate to an alkyl aluminum precursor and an alane precursor, either sequentially or simultaneously. The alane precrursor comprises an amine-alane and a stabilizing amine selected from one or more of diemthylcyclohexylamine or dicyclomethylhexylamine.

Deposition of films comprising aluminum alloys with high aluminum content

Provided are methods of depositing films comprising alloys of aluminum, which may be suitable as N-metal films. Certain methods comprise exposing a substrate surface to a metal halide precursor comprising a metal halide selected from TiCl, TaCland HfClto provide a metal halide at the substrate surface; purging metal halide; exposing the substrate surface to an alkyl aluminum precursor comprising one or more of dimethyaluminum hydride, diethylhydridoaluminum, methyldihydroaluminum, and an alkyl aluminum hydrides of the formula [(CxHy)AlH], wherein x has a value of 1 to 3, y has a value of 2x+2, a has a value of 1 to 2, and n has a value of 1 to 4; and exposing the substrate surface to an alane-containing precursor comprising one or more of dimethylethylamine alane, methylpyrrolidinealane, di(methylpyrolidine)alane, and trimethyl amine alane borane. Other methods comprise exposing a substrate surface to a metal precursor and trimethyl amine alane borane.

Deposition of N-metal films comprising aluminum alloys

Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The inlet end is connectable to an inlet gas source and the outlet end is connectible with a vacuum source. Also provided are gas distribution apparatus with spiral delivery channels, intertwined spiral delivery channels, splitting delivery channels, merging delivery channels and shaped delivery channels in which an inlet end and outlet end are configured for rapid exchange of gas within the delivery channels.

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San Jose, CA, United States of America

Faruk Gungor