National Central University

Industrial Technology Research Institute

Farn-Shiun Hwu

Jyh-Chen Chen

Ming-Te Lin

Kuang-Yu Tai

Gwo-Jiun Sheu

Bing-Jung Chen

The present invention provides a method for measuring the PN-junction temperature of a light-emitting diode (LED), which uses a reference voltage to establish the function of current, real power, power factor, or driving-time interval on temperature. The initial and thermal-equilibrium values of current, real power, power factor, or driving-time interval are measured, and hence the variations thereof are calculated. Referring to the pre-established function, the temperature change is given. By the temperature change and the initial temperature, the PN-junction temperature of the LED is thereby deduced.

Method for measuring PN-junction temperature of light-emitting diode (LED)

A heat shield and a crystal growth equipment are provided, in which the length-adjustable and hybrid-angle heat shield is provided for the crystal growth equipments. The heat shield is adapted for not only guiding the inert gas flow but also speeding up the flow rate of the gas and the cooling rate of the crystal so as to raise the axial temperature gradient at the solid-molten interface, the growth rate of the crystal and the productivity. The heat shield further can also reduce the possibility of microdefect nucleation to improve the quality of crystal at the same time. In addition, the length of heat shield can be adjusted according to the distance between the heat shield and the semiconductor material melt in different crucibles in case that the crucibles are made by different factories. This can reduce the cost of the heat shield manufacturing.

Heat shield and crystal growth equipment

Growing community of inventors

Yangmei, Taiwan

Farn-Shiun Hwu