Glo Ab

Nanosys, Inc.

Samsung Electronics Co., Ltd.

Glo Technologies LLC

Fariba Danesh

Tsun Yin Lau

Nathan Fredrick Gardner

Richard P Schneider, Jr

Michael Jansen

Zhen Chen

Max Batres

Fan Ren

Anusha Pokhriyal

Daniel Bryce Thompson

Michael Joseph Cich

Willibrordus Gerardus Maria Van Den Hoek

Benjamin Leung

Cameron Dean Danesh

Sharon N Farrens

Timothy Gallagher

Miao-Chan Tsai

Miljenko Modric

Fredrick A Kish, Jr

Shuke Yan

Zulal Tezcan Ozel

Martin F Schubert

Jonathan J Wierer, Jr

Ronald T Kaneshiro

Zulal Tezcan

Frank Patterson

Mariana Munteanu

Michael J Cich

Cameron Danesh

Jonathan J Wierer

Jr Fredrick A Kish

A light emitting device includes a backplane, an array of light emitting diodes attached to a frontside of the backplane, a positive tone, imageable dielectric material layer, such as a positive photoresist layer, located on the frontside of the backplane and laterally surrounding the array of light emitting diodes, such that sidewalls of the light emitting diodes contacting the positive tone, imageable dielectric material layer have a respective reentrant vertical cross-sectional profile, and at least one common conductive layer located over the positive tone, imageable dielectric material layer and contacting the light emitting diodes.

Light emitting diode device containing a positive photoresist insulating spacer and a conductive sidewall contact and method of making the same

A light emitting device (LED) includes an n-doped semiconductor material layer, an active region including an optically active compound semiconductor layer stack configured to emit light located on the n-doped semiconductor material layer, a p-doped semiconductor material layer located on the active region, an anode contact contacting the p-doped semiconductor material layer, a reflector overlying and electrically connected to the anode contact, and a device-side bonding pad layer located on the reflector. The p-doped semiconductor material layer includes an electrically active region that is at least partially covered by the anode contact and an inactive region that an electrical conductivity less than 30% of the electrically active region.

Light emitting diodes containing deactivated regions and methods of making the same

A method of forming a light emitting device includes forming a semiconductor light emitting diode, forming a metal layer stack including a first metal layer and a second metal layer on the light emitting diode, and oxidizing the metal layer stack to form transparent conductive layer including at least one conductive metal oxide.

Light emitting diode containing oxidized metal contacts

A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer. and a GaN barrier layer located on the aluminum gallium nitride layer.

Indium gallium nitride red light emitting diode and method of making thereof

A white LED and a method of repairing a light emitting device including, the method including colored light emitting diodes (LEDs) configured to emit different colors of light and arranged in pixels on a backplane of the device, the method including: determining whether each pixel is a functional pixel or a defective pixel; and repairing the defective pixels by transferring white LEDs to the backplane in each defective pixel.

White light emitting diode (LED) and method of repairing light emitting device using same

A growth mask layer is formed over a semiconductor material layer on a substrate. Optionally, a patterned hard mask layer can be formed over the growth mask layer. A nano-imprint lithography (NIL) resist layer is applied, and is imprinted with a pattern of recesses by stamping. The pattern in the NIL resist layer through the growth mask layer to provide a patterned growth mask layer with clusters of openings therein. If a patterned hard mask layer is employed, the patterned hard mask can prevent transfer of the pattern in the area covered by the patterned hard mask layer. Semiconductor material portions, such as nanowires can be formed in a cluster configuration through the clusters of openings in the patterned growth mask layer. Alignment marks can be formed concurrently with formation of semiconductor material portions by employing nano-imprint lithography.

Method of making a semiconductor device using nano-imprint lithography for formation of a selective growth mask

A light emitting diode includes a first conductivity type semiconductor material region, an active region located over the first conductivity type semiconductor material region, a second conductivity type semiconductor material layer located over the active region, a first layer containing at least one of nickel or gold located over the second conductivity type semiconductor material layer, a reflective top contact electrode located over the first layer, a dielectric material layer located over the top contact electrode and containing an opening, and a reflector located over the dielectric material layer and contacting the top contact electrode through the opening in the dielectric material layer.

A light emitting diode includes a n-doped region, a p-doped region, and a light emitting region located between the n-doped region and a p-doped region. The n-doped region includes a first GaN layer, at least one n-doped second GaN layer located over the first GaN layer, an AlGaN dislocation blocking layer located over the at least one n-doped second GaN layer, and a n-doped third GaN layer located over the AlGaN dislocation blocking film.

Epitaxial gallium nitride based light emitting diode and method of making thereof

A light emitting device, such as an LED, is formed by forming a plurality of semiconductor nanostructures having a doping of a first conductivity type through, and over, a growth mask layer overlying a doped compound semiconductor layer. Each of the plurality of semiconductor nanostructures includes a nanofrustum including a bottom surface, a top surface, tapered planar sidewalls, and a height that is less than a maximum lateral dimension of the top surface, and a pillar portion contacting the bottom surface of the nanofrustum and located within a respective one of the openings through the growth mask layer. A plurality of active regions on the nanofrustums. A second conductivity type semiconductor material layer is formed on each of the plurality of active regions.

Light emitting diodes formed on nanodisk substrates and methods of making the same

A light emitting diode (LED) includes a n-doped semiconductor material layer located over a substrate, an active region including an optically active compound semiconductor layer stack configured to emit light located over the n-doped semiconductor material layer, a p-doped semiconductor material layer located over the active region and containing a nickel doped surface region, a conductive layer contacting the nickel doped surface region of the p-doped semiconductor material, and a device-side bonding pad layer electrically connected to the conductive layer.

Sub pixel light emitting diodes for direct view display and methods of making the same

A light emitting device includes a substrate including a doped compound semiconductor layer, a mesa structure located on the doped compound semiconductor layer and containing a first-conductivity-type compound semiconductor layer, an active layer stack configured to emit light at a peak wavelength, a second-conductivity-type compound semiconductor layer, and a transparent conductive oxide layer, and a dielectric material layer laterally surrounding the mesa structure and including an upper portion that overlies a peripheral region of the mesa structure and extending above the transparent conductive oxide layer, wherein an opening in the upper portion of the dielectric material layer is located over a center region of the mesa structure.

Light emitting diodes with integrated reflector for a direct view display and method of making thereof

Growing community of inventors

Los Altos Hills, CA, United States of America

Fariba Danesh