Leland Stanford Junior University

Farhad Taghibakhsh

Craig Steven Levin

Peter D Olcott

Henry Meyer Daghighian

A method for extracting photon depth of interaction information in a positron emission tomography system is provided. A pulse is detected in a photodetector. A height of the pulse is measured. A determination of whether the pulse height is within a set range is made. Photon depth of interaction is extracted from the pulse height. An energy of interaction is calculated from the pulse height and calibration data. The extracted photon depth and calculated energy spectrum are used in image reconstruction.

High resolution positron emission tomography

Detection of ionizing radiation with modulation doped field effect transistors (MODFETs) is provided. There are two effects which can occur, separately or together. The first effect is a direct effect of ionizing radiation on the mobility of electrons in the 2-D electron gas (2DEG) of the MODFET. An ionizing radiation absorption event in or near the MODFET channel can perturb the 2DEG mobility to cause a measurable effect on the device conductance. The second effect is accumulation of charge generated by ionizing radiation on a buried gate of a MODFET. The conductance of the MODFET can be made sensitive to this accumulated charge, thereby providing detection of ionizing radiation. 1-D or 2-D arrays of MODFET detectors can be employed to provide greater detection area and/or spatial resolution of absorption events. Such detectors or detector pixels can be integrated with electronics, such as front-end amplification circuitry.

Growing community of inventors

Redwood City, CA, United States of America

Farhad Taghibakhsh