Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.

Other

Fangmei Liu

Xingyu Zhou

Zhaosong Liu

A display panel, a display device, and a method of manufacturing a display panel are provided. The display panel includes the plurality of stacked metal sub-layers and the first passivation sub-layer and the second passivation sub-layer stacked. The first passivation sub-layer is disposed between the metal layer and the second passivation layer. Material of the first passivation sub-layer includes silicon nitride. The first passivation sub-layer covers the untidy area at the ends of the molybdenum-titanium alloy thin layer to avoid from detachment of the passivation layer, and meanwhile to solve the issues of simplifying the manufacturing process of the display panel, and to avoid from oxidation of the bonding pads.

Display panel and display device and method of manufacturing display panel

The present disclosure provides a thin film transistor and a manufacturing method thereof. The thin film transistor includes a substrate, a light shielding layer, an intermediate buffer layer, and a buffer layer, wherein the light shielding layer is formed on the substrate, the buffer layer is located above the substrate and the light shielding layer, the intermediate buffer layer is formed between the buffer layer and the light shielding layer, and the intermediate buffer layer is made of ceramic material.

Thin film transistor and manufacturing method thereof

An inkjet printing OLED display panel and manufacturing method are provided. The method includes sequentially forming a passivation layer and a planarization layer on thin-film transistors on a glass substrate, and the passivation layer covers the thin-film transistors; forming vias both at the passivation layer and the planarization layer; forming anodes on the planarization layer, and the anodes are electrically connected to the thin-film transistors through the vias; depositing a pixel definition layer on the planarization layer, and the pixel definition layer covers the anodes; using a half-tone mask to define a pattern of the pixel definition layer such that a region of the pixel definition layer located above the anodes forms a notch, and a height of the pixel definition layer located between the anodes is decreased; using an inkjet printing technology to form a light-emitting layer in the notch of the pixel definition layer.

Inkjet printing OLED display panel and manufacturing method for the same

The invention provides a manufacturing method of flexible TFT backplane. The method uses a mixed solution of carbon nanotubes and metal oxide to prepare active layer () of TFT (T), and the temperature is lower and will not cause damage to the flexible base substrate (), and the material of flexible base substrate () is not restricted. The use of vacuum equipment is reduced to save production cost. The carbon nanotubes have excellent conductivity, and the mixture with metal oxide as the active layer () of the TFT can improve the electron mobility. The buffer layer () has a silicon nitride film () as the lowest layer contacting the flexible base substrate (), making good adhesion between buffer layer () and flexible base substrate (). The topmost layer of the buffer layer () is an aluminum oxide film (), which enables the buffer layer () to resist to water.

Manufacturing method of flexible TFT backplane and flexible TFT backplane

A method for manufacturing an organic light-emitting diode (OLED) backplane is provided. The method includes sequentially depositing a first oxide semiconductor layer, a second oxide semiconductor layer and a third oxide semiconductor layer to obtain an active layer of a thin film transistor. The flow ratio of an argon gas and an oxygen gas introduced during the deposition of the first and third oxide semiconductor layers is greater than the flow ratio of the argon gas and the oxygen gas introduced during the deposition of the second oxide semiconductor layer. As a result, the oxygen content of the first and third oxide semiconductor layers is greater than the oxygen content of the second oxide semiconductor layer. Therefore, the conductivity of the active layer of the thin film transistor device is enhanced. The interface defects are reduced. The stability of the thin film transistor device is improved.

Method for manufacturing OLED backplane comprising active layer formed of first, second, and third oxide semiconductor layers

Provided are a manufacturing method of a transistor on color filter type organic light emitting display and a transistor on color filter type organic light emitting display. In the manufacturing method of a transistor on color filter type organic light emitting display, after preparing the color filter layer, by coating the zinc oxide solution mixed with lithium on the gate insulation layer in a spin coating manner to form a zinc oxide coating layer mixed with lithium and then, by annealing the zinc oxide coating layer mixed with lithium and patterning the zinc oxide coating layer mixed with lithium to form a channel layer, the process temperature can be as low as 200 Celsius degrees to satisfy the temperature condition of manufacturing the transistor on color filter type organic light emitting display and the operation is easy without using the expensive vacuum equipment.

Manufacturing method of transistor on color filter type organic light emitting display and transistor on color filter type organic light emitting display

Growing community of inventors

Guangdong, China

Fangmei Liu