Micron Technology Incorporated

Fangfang Zhu

Jiangli Zhu

Ying Yu Tai

Chih-Kuo Kao

Juane Li

Ning Chen

Wei Wang

Jason Duong

Alex G Tang

Yueh-Hung Chen

Kishore Kumar Muchherla

Tingjun Xie

Sanjay Subbarao

Akira Goda

Dave Scott Ebsen

Vivek Shivhare

Peter Sean Feeley

Zhenming Zhou

Murong Lang

Lakshmi Kalpana Vakati

Seungjune Jeon

Yi-Min Lin

Zhenlei Shen

Horia Cristian Simionescu

Dhawal Bavishi

Paul Roger Stonelake

Trevor Conrad Meyerowitz

Zhongguang Xu

Yuehhung Chen

Bharani Rajendiran

Methods, systems, and apparatuses include receiving a write command including user data. The write command is directed to a portion of memory including a first block and a second block. A buffer is allocated for executing the write command to the first block. The buffer includes multiple buffer decks and the buffer holds the user data written to the first block. User data is programmed into the first block to a threshold percentage. The threshold percentage is less than one hundred percent of the first block. A buffer deck is invalidated in response to programming the first block to the threshold percentage. The buffer deck is reallocated to the second block for programming the user data into the second block. The buffer deck holds user data written to the second block.

Buffer allocation for reducing block transit penalty

Methods, apparatuses and systems related to managing read levels across multiple groupings or decks are described. The apparatus may include a read level management mechanism configured to controls or dynamically adjusts the read levels for the different groupings according to a real-time condition/measure associated with the programming delays.

Apparatus with multi-deck read level management and methods for operating the same

Methods, systems, and apparatuses include receiving a write command including user data. The write command is directed to a portion of memory including a first and second block and a first and second user data portion are directed to the first and second block. Temporary parity data is generated using the first and second user data portions. The temporary parity data and the first and second user data portions are stored in a buffer. Portions of the first and second block are programmed with two programming passes. The first and second user data portions in the buffer are invalidated in response to a completion of the second programming pass of the portions of the first and second blocks. The temporary parity data is maintained in the buffer until a second programming pass of the first and second block.

Multiple-pass programming of memory cells using temporary parity generation

A determination is made of whether a memory sub-system operates in a full capacity mode or a reduced capacity mode. The full capacity mode corresponds to accessing data residing at a set of memory devices via a number of physical data channels that corresponds to a number of logical data channels. The reduced capacity mode corresponds to accessing the data via a number of physical data channels that is less than the number of logical data channels. A data structure is updated to include one or more mappings between physical data channels and logical data channels according to the determination. A memory access operation to access a data item at memory cells of at least one of the set of memory devices is executed based on the one or more mappings of the data structure.

Enabling multiple data capacity modes at a memory sub-system

Methods, systems, and devices for one or more acceleration engines for memory sub-system operations are described. An acceleration engine can perform one or more validation procedures on one or more codewords of a management unit. The acceleration engine can collect validation data for the management unit based on performing the validation procedures. The acceleration engine can aggregate the validation data into group validation data associated with a set of management units. The acceleration engine can transmit the group validation data to firmware of a memory sub-system or a host device.

Hardware based status collector acceleration engine for memory sub-system operations

A stripe-based command pertaining to a set of host data items at management units (MUs) of a memory sub-system configured to support non-stripe based commands is received. A set of operations to be executed at the MUs based on the stripe-based command is determined. The set of operations include one or more first operations associated with the set of host data items, the one or more first operations having a first type, and one or more second operations associated with the set of host data items, the one or more second operations having a second type. A first set of commands corresponding to the one or more first operations and a second set of commands corresponding to the one or more second operations is executed.

Enabling stripe-based operations for error recovery at a memory sub-system

A partition command is stored at free memory address location of the local memory corresponding to an index of an address array. The index is associated with an entry in the address array. A last entry in a linked list of entries from a tail register is obtained based on an allocation of the stored partition command to a partition command queue of a plurality of partition command queues. The tail register corresponds to the partition command queue of the plurality of partition command queues. Responsive to obtaining the last entry in the linked list, an entry to the linked list after the last entry is appended. The entry corresponds to the index of the address array associated with the stored partition command.

Dynamic partition command queues for a memory device

Disclosed is a system comprising a memory device and a processing device, operatively coupled with the memory device, to perform operations including identifying a group of memory cells corresponding to a first range of logical block addresses (LBAs). The operations performed by the processing device further include receiving a memory access command with respect to the group of memory cells. The operations performed by the processing device further include responsive to determining that a data structure associated with the group of memory cells references a second range of LBAs, blocking the memory access command; responsive to determining that the first range of LBAs does not include each LBA of the second range of LBAs, performing, on the group of memory cells, a trim operation; and responsive to determining that the data structure indicates the completion of the trim operation, performing a memory access operation specified by the memory access command.

Managing trim commands in a memory sub-system

A memory system includes a memory device and a processing device coupled to the memory device. The processing device receives a plurality of codewords; determines that one or more codewords of the plurality of codewords are corrupt; selects a first read voltage associated with the one or more codewords, such that the first read voltage is based on a second read voltage utilized for reading the one or more codewords in a previous read operation; and applies the first read voltage to a set of memory cells storing the one or more corrupted codewords.

Automated voltage demarcation (VDM) adjustment for memory device

Embodiments include methods, systems, devices, instructions, and media for limiting hot-cold swap wear leveling in memory devices. In one embodiment, wear metric values are stored and monitored using multiple wear leveling criteria. The multiple wear leveling criteria include a hot-cold swap wear leveling criteria, which may make use of a write count offset value. Based on a first wear metric value of a first management group and a second wear metric value of a second management group, the first management group and the second management group are selected for a wear leveling swap operation. The wear leveling swap operation is performed with a whole management group read operation of the first management group to read a set of data, and a whole management group write operation to write the set of data to the second management group.

Limiting hot-cold swap wear leveling

A system can include a memory device and a processing device coupled with the memory device. The processing device can receive, from a host system, a command of a type; determine a weighted count of the command according to the type of the command; track, based on the weighted count, a first count of commands of the type; determine whether the first count of commands of the type satisfies a threshold criterion for commands of the type; and responsive to determining that the first count of commands of the type satisfies the threshold criterion, transmit a notification to the host system to refrain from transmitting commands of the type.

Concurrent command limiter for a memory system

A method includes performing, over a time period, a quantity of write operations associated with a quad-level cell (QLC) memory block, determining the time period exceeds a threshold time, designating the QLC memory block as a bimodal, determining a voltage threshold level of a last successful read operation associated with the QLC memory block, and setting a read threshold level of at least a portion of the QLC memory block at the voltage threshold level of the last successful read operation.

Memory cell voltage level selection

A die command from a requestor is received. The die command into a die command queue is stored. The die command from the die command queue into a plurality of partition commands is partitioned. The plurality of partition commands into one of a first plurality of partition command queues or a second plurality of partition command queues is mapped. The partition command of the first plurality of partition command queues or the second plurality of partition command queues is issued to a command processor to be applied to the one or more memory devices.

Partition command queues for a memory device

Methods, systems, and apparatuses include retrieving a defectivity footprint of a portion of memory, the portion of memory composed of multiple blocks. A deck programming order is determined, based on the defectivity footprint, for a current block of the multiple blocks. The current block is composed of multiple decks. The deck programming order is an order in which the multiple decks are programmed. The multiple decks programmed according to the determined deck programming order.

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San Jose, CA, United States of America

Fangfang Zhu