Shanghai Huali Microelectronics Corporation

Other

Shenzhen Yinwang Intelligent Technologies Co., Ltd.

Fang Wei

Hsusheng Chang

Chenming Zhang

Jian Ding

Wei Cheng

Yun Cao

Yukun Lv

Zhonghua Zhu

Boya Qin

Xusheng Zhang

Leilei Xu

Han Chen

Huan Kan

Zhihao Chu

Zhixi Wang

This application provides example detection signal transmitting methods, detection apparatuses, and storage medium. One example method includes determining an orientation of a field of view of a detection apparatus. One of a plurality of anti-interference parameters can then be selected as a target anti-interference parameter based on the orientation of the field of view of the detection apparatus and according to a predefined rule, where the plurality of anti-interference parameters are determined according to the predefined rule. A detection signal can then be transmitted based on the target anti-interference parameter.

Detection signal transmitting method and apparatus, and storage medium

The present disclosure provides a pattern density analysis method for analyzing a local pattern density of a layout, the method comprising: obtaining a pattern attribute of each layout pattern located on a layout region to be analyzed; setting, for each layout pattern, a relevant window for the layout pattern based on the corresponding pattern attribute; calculating the pattern density of each relevant window; and selecting the maximum value of the pattern densities of the relevant windows as the maximum local pattern density of the layout, and selecting the minimum value of the pattern densities of the relevant windows as the minimum local pattern density of the layout.

Pattern density analysis method

A simulation method of CMP process comprises: building a CMP model, and forming a matrix table of line width logarithm-density according to the CMP model, and making each intersection of the matrix table correspond to each CMP result under the corresponding line width and density; dividing a layout into a plurality of grids, and converting the equivalent line width and density of each grid into the coordinate of line width logarithm-density in the matrix table; fitting and calculating preliminary CMP simulation results of each grid according to the coordinate of each grid in the matrix table and the CMP simulation results of its adjacent intersections of the matrix table; fitting and computing final CMP simulation results of each grid according to a related weighting factor which considers the impact of adjacent grids for the current grid on the layout; outputting the final CMP simulation results of the whole layout.

Simulation method of CMP process

A method of layout pattern modification includes the following steps: step 1: performing an OPC process on a layout containing a plurality of square patterns to obtain a plurality of post-OPC patterns in correspondence with the plurality of square patterns; step 2: performing a manufacturing rule check on each of the plurality of post-OPC patterns to identify, from the plurality of post-OPC patterns, one or more post-OPC patterns violating the manufacturing rule; and step 3: rotating at least one of the one or more post-OPC patterns violating the manufacturing rule; and step 4: performing a manufacturing rule check on each of the rotated and non-rotated post-OPC patterns, if no post-OPC pattern violating the manufacturing rule is identified, finishing the process; otherwise, if one or more post-OPC patterns violating the manufacturing rule are identified, continuing to perform step 3 and step 4.

Layout pattern modification method

An optical proximity correction (OPC) method is disclosed, in which original design patterns are first grouped into a first group and a second group, wherein each pattern of the first group has a size greater than a size of any pattern of the second group. Next, a simple OPC model and a complex OPC model are individually established for the two groups using different numbers of convolution kernels. After that, the simple OPC model and the complex OPC model are combined together to generate a hybrid OPC model which is thereafter used to perform an OPC treatment on the original design patterns. This method is capable of shortening the OPC processing time and increasing the flexibility in utilizing OPC software and hardware resources.

Optical proximity correction method based on hybrid simulation model

The present invention relates to the field of semiconductor manufacturing, and particularly to a method of making Optical Proximity Correction to an original gate photomask pattern based on different substrate areas. The present invention discloses a method of making OPC to an original gate photomask pattern based on different substrate areas, which makes correction to gate photomask pattern dimension on the AA and to gate photomask pattern dimension on the STI respectively by creating two different optical proximity effect models of the gate, so as to control the finally imaged gate photomask pattern dimensions more accurately; moreover, the error of the correction result of the gate spacing dimension on the STI can be reduced by 4% by separating the patterns and using the gate model based on the STI, so as to avoid the spacing dimension error when the photolithography exposure conditions vary.

Method of making optical proximity correction to original gate photomask pattern based on different substrate areas

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Shanghai, China

Fang Wei