Chongqing Passion Chuangzhi Microelectronics Co., Ltd.

Chongqing University

Fang Tang

Shengdong Hu

Xichuan Zhou

Shu Han

Zhi Lin

Jianlin Zhou

Qi Yuan

A blood oxygen detection chip with a capability of fast tracking light intensity. A photocurrent buffer receives light and generates an output photocurrent iph that is not affected by a leakage current as much as possible, a bandgap voltage reference and a linear voltage regulator are mainly used to obtain an accurate adjustable reference voltage Vref, an integrator integrates the photocurrent iph to obtain a voltage signal in a linear relation with a photocurrent value, a pulse generator converts the voltage signal to a frequency signal, and finally an output buffer performs wave shaping to obtain a final output frequency signal Freq in a linear relation with a light intensity value.

Blood oxygen detection chip with capability of fast tracking light intensity

A pulse modulation circuit with a high-frequency-limiting function, including a comparator, an RS trigger, a switching triode, a NAND gate, a NOR gate, and a charging capacitor. A capacitor charging time is controlled by adjusting a bias current IB, a bias current IB, a reference voltage V, and a reference voltage Vor adjusting values of capacitors Cand C. In this way, a highest output frequency of a pulse generator is limited, so as to reduce hardware system overheads.

Pulse modulation circuit with high-frequency-limiting function

The present disclosure relates to a high-speed superjunction lateral insulated gate bipolar transistor, and belongs to the technical field of semiconductor power devices. Fast turn-off can be achieved by replacing the lightly doped substrate of the existing bulk silicon superjunction lateral insulated gate bipolar transistor with heavily doped substrate, breakdown voltage of the device is ensured by reasonably setting the total number of impurities in each drift region of the over junction-sustaining voltage layer, and further application thereof in integrated circuits is realized by providing the semiconductor second substrate region and the semiconductor isolation region. A high speed superjunction laterally insulated gate bipolar transistor according to the present disclosure solves the contradiction between cost of the superjunction laterally insulated gate bipolar transistor and achievement of fast turn-off on a bulk silicon substrate.

High-speed superjunction lateral insulated gate bipolar transistor

Growing community of inventors

Chongqing, China

Fang Tang