Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd.

Wuhan China Star Optoelectronics Technology Co., Ltd.

Fang Qin

Cheng Chen

Bin Yuan

Chao Dai

Xuanyun Wang

Quan Hu

A gate drive circuit includes a plurality of gate drive units. Each of the gate drive units includes a stage transmission signal selection circuit, a pull-up control circuit, a pulse number reduction circuit, a first inversion circuit, a first output stage, and a second output stage, and can output a second gate control signal with a greater number of pulses and a first gate control signal with a less number of pulses. At least one of the stage transmission signal selection circuit, the first inversion circuit or the second output stage includes three transistors with the same channel type.

Gate drive circuits and display panels

The present application provides a display panel and a display device. The display panel includes a gate driving circuit and a plurality of rows of pixel circuits. By electrically connecting a gate of a driving transistor in each of the pixel circuits to at least one oxide thin-film transistor, each of the pixel circuits has a low leakage characteristic, thereby realizing a low-frequency driving display of the pixel circuits. On this basis, a display time interval between two adjacent rows of the pixel circuits can be lengthened about half-frame time, thereby realizing an ultra-low-frequency driving display.

Display panel and display device

A flexible display panel and a method for manufacturing same are provided. The flexible display panel includes a bending region, and data signal lines are disposed within the bending region. At least one of the data signal lines includes at least one metal layer, at least one of the data signal lines includes at least one stress buffer region, and a stress relieving feature is disposed within the stress buffer region.

Display panel and method for manufacturing same

The present invention discloses a flexible display panel, a flexible display device and a method of manufacturing the flexible display panel, the metal patterns of the bent region of the flexible display panel of the present invention has a double-layer structure, and the second metal layer pattern is designed with a wavy pattern, which can reduce the stress on the metal layer patterns during pad bending process, decrease the breakage probability of metal layer patterns in the bent region of the flexible display, and ensure the resistance stability of the metal layer patterns. Furthermore, the connection portion between the first metal layer pattern and the second metal layer pattern can improve the reliability, reduce the abnormal probability of display caused by the pattern breakage, and ensure normal signal transmission.

Flexible display panel, flexible display device and method of manufacturing the flexible display panel

The present invention provides a manufacture method of a flexible display panel, and after forming grooves on the rigid substrate, and forming the flexible supporting bases in the grooves, and manufacturing the display element layer on the flexible supporting bases and the rigid substrate, the flexible display mother board is obtained. Then, the normal knife flywheel is used to cut the flexible display mother board along the edges of the grooves to obtain the flexible substrate units. After stripping the rigid substrates in the flexible substrate units with laser, the flexible display substrates are obtained. The method saves the purchase cost of the laser cutting apparatus, and thus to reduce the manufacture cost of the flexible display substrate, and meanwhile, to raise the cutting yield of cutting the flexible display mother board with the normal knife flywheel for promoting the usage lifetime of the knife flywheel.

Manufacture method of flexible display panel

The present invention provides a flexible substrate and a manufacturing method thereof. The flexible substrate is divided into a first organic material layer () and a second organic material layer (). A coverage area of the second organic material layer () on a carrying plate () is greater than a coverage area of the first organic material layer () on the carrying plate () and a major, long edge of the second organic material layer () encloses a major, long edge ofthe first organic material layer () so as to help reduce the thickness of an edge of the flexible substrate and prevent etching residue at an edge, reduce the coverage area of the organic materials on the carrying plate, and reduce warpage of the flexible substrate. Further, an alignment mark () is formed on the second organic material layer () at a location between the major, long edge of the first organic material layer () and the major, long edge of the second organic material layer () to ensure alignment accuracy in subsequent processes, such as vapor deposition. Further, since there is only one layer of organic material at the site of alignment mark (), light transmission rate is increased and the rate of successful alignment is enhanced.

Flexible substrate and manufacturing method thereof

The present disclosure provides a flexible organic light-emitting diode (OLED) display panel including a flexible substrate and a plurality of thin film transistor (TFT) devices disposed on the flexible substrate. The flexible substrate comprises: a first polyimide (PI) layer; a first inorganic barrier layer disposed on a surface of the first PI layer; a titanium metal layer disposed on a surface of the first inorganic barrier layer; a second PI layer disposed on a surface of the titanium metal layer; and a second inorganic barrier layer disposed on a surface of the second PI layer. The TFT devices are disposed on a surface of the second inorganic barrier layer.

Flexible OLED display panel having a substrate with a titanium layer and method for manufacturing same

The present disclosure relates to a TFT includes an active layer formed on a substrate, wherein the active layer includes a first semiconductor layer and a second semiconductor layer stacked together. The first semiconductor layer is made by Indium gallium zinc oxide (IGZO) having an atomic ratio In/(Ga+Zn) smaller than 50%, and the second semiconductor layer is made by IGZO having the atomic ratio In/(Ga+Zn) greater than 55%. The present disclosure also includes an array substrate having the TFT and the manufacturing method thereof. The array substrate may be adopted in LCD or OLED. The TFT adopts two layers of IGZO semiconductor materials to be the semiconductor of the active layer. Not only the demand toward the TFT characteristics may be satisfied, but also the carrier mobility rate of the IGZO active layer may be enhanced.

Thin film transistors, arrays substrates, and manufacturing methods

An array substrate is disclosed. The array substrate includes: a substrate adopting an organic material; an isolation layer adopting a metal material, and the isolation layer is formed on the substrate; and a buffering layer formed at a side of the isolation layer away from the substrate. In the array substrate of the present invention, in a high-temperature PECVD process, a pollution problem caused by the plasma directly bombarding the substrate made of an organic material can be avoid. A display device applying the array substrate and a manufacturing method for an array substrate are also disclosed.

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Wuhan, China

Fang Qin