Applied Materials, Inc.

Fang Jie Lim

Sriskantharajah Thirunavukarasu

Jun-Liang Su

Chin Wei Tan

Karrthik Parathithasan

Eng Sheng Peh

Puay Han Tan

Arvind Sundarrajan

Ananthkrishna Jupudi

Nuno Yen-Chu Chen

Felix Deng

Sai Kumar Kodumuri

Qi Jie Peng

Wei Jie Dickson Teo

Embodiments of methods and apparatus for reducing warpage of a substrate are provided herein. In some embodiments, a method for reducing warpage of a substrate includes: applying an epoxy mold over a plurality of dies on the substrate in a dispenser tool; placing the substrate on a pedestal in a curing chamber, wherein the substrate has an expected post-cure deflection in a first direction; inducing a curvature on the substrate in a direction opposite the first direction; and curing the substrate by heating the substrate in the curing chamber.

Low warpage curing methodology by inducing curvature

Methods and apparatus for processing a substrate are provided. For example, metrology apparatus configured for use with a substrate processing platform comprise an interferometer configured to obtain a first set of measurements at a first set of points along a surface of a substrate, a sensor configured to obtain a second set of measurements at a second set of points different from the first set of points along the surface of the substrate, an actuator configured to position the interferometer and the sensor at various positions along a measurement plane parallel to the surface of the substrate for obtaining the first set of measurements and the second set of measurements, and a substrate support comprising a substrate support surface for supporting the substrate beneath the measurement plane while obtaining the first set of measurements and the second set of measurements.

Pre and post processing metrology apparatus

Methods and apparatus for processing a substrate are provided herein. For example, a system for processing a substrate includes a process chamber comprising a first processing volume and a second processing volume, a carrier disposed in the first processing volume, comprising a first thermoelectric module (TEM), and configured to support the substrate while the substrate is being heated or cooled, a chuck disposed within the second processing volume, comprising a second TEM, and configured to receive the substrate from the carrier and to support the substrate while the substrate is being heated or cooled, and a system controller configured to monitor a temperature of at least one of the substrate, the carrier, or the chuck during operation, and based on the temperature of the at least one of the substrate, the carrier, or the chuck, supply current to at least one of the first TEM or the second TEM.

Methods and apparatus for warpage correction

Methods and apparatus for processing a substrate are provided herein. For example, a system for processing a substrate includes a process chamber comprising a first processing volume and a second processing volume; a first heating device configured to heat a substrate to a first temperature; a carrier configured to support the substrate while the substrate is being heated using the first heating device to the first temperature and transfer the substrate to and from each of the first processing volume and the second processing volume; a second heating device configured to maintain the substrate at or near the first temperature; and a chuck configured to receive the substrate from the carrier, and comprising an outer zone and an inner zone having independent variable pressure control to apply a chucking force at the outer zone that is different from a chucking force provided at the inner zone.

Methods and apparatus for processing a substrate

Embodiments of methods and apparatus for handling substrates of different sizes are provided herein. In some embodiments, an apparatus for handling substrates of different sizes includes: a pair of end effectors having a first set of contact pads configured to support a substrate having a first size and a second set of contact pads configured to support a substrate having a second size, smaller than the first size.

Apparatus for handling various sized substrates

A bridging front opening unified pod (FOUP) is provided herein. In some embodiments, the bridging FOUP includes a bottom floor, side walls, a ceiling and a back wall that forms an enclosure volume having a front opening, a plurality of supports coupled to the side walls and extending into the enclosure volume, wherein the plurality of supports are configured to support a substrate carrier, a base plate assembly comprising a base plate coupled to the bottom floor, a pair of L-brackets coupled to the base plate, wherein each L-brackets includes a short lift pin, a long lift pin coupled to the base plate, wherein the height of the short lift pins and the long lift pin is selected such that the substrate is kept level when disposed thereon, and a docking support disposed proximate the base plate assembly and configured to support a substrate carrier.

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Singapore, Singapore

Fang Jie Lim