Taiwan Semiconductor Manufacturing Comp. Ltd.

Fang-Jen Hsu

Chen-Peng Fan

Ming-Shuo Yen

Chiang-Chou Lo

Hsing-Chung Lin

Chao-Yu Hsieh

Chi-Ping Chen

Calculate the WIP for a stage ST for each lot Li in a queue of lots being processed in a production line between the stage ST and an end point, where &ldquo;i&rdquo; is a positive integer representing the position of the lot Li in the queue, and where &ldquo;kk&rdquo; is a positive integer indicating the sequential position of the stage ST (location along the production line) from the beginning to the end of a predetermined portion of the production line. Calculate remaining scheduled cycle time (RCT ) for each lot Li. Calculate consumed scheduled cycle time (CST ) for each lot Li. Calculate (WIP *RCT ) for each lot Li. Calculate (WIP*CST ) for each lot Li. Sum WIP *RCT for all lots Li of a stage. Sum WIP *CST for all lots Li of a stage. Calculate the Index of Dynamic Forward Loading Intensity (I ) for each stage ST by dividing the (Sum WIP *RCT , for all lots of the stage) by the (Sum WIP *CST , for all lots of the stage) where kk is a positive integer indicating the location of the stage from the beginning to the end of the production line. Adjust the dispatching order of lots based on the rankings of the stages of the production I line, with lowest I ratings having priority.

Dispatching system with dynamically forward loading (DFL) intensity to solve nonlinear wafer out problem

A method for etching access opening to aluminum alloy wire bonding pads of integrated circuit chips is described wherein a polymer layer is in-situ deposited into the opening after the bonding pad has been exposed by dry etching of a passivation layer. The passivation layer, is first etched with fluorocarbon etchants and then a TiN ARC layer is removed from over the aluminum bonding pad with etchants which may contain chlorine either as etch components or as a contaminant in an etchant such as SF.sub.6 non-volatile chlorine containing residues including AlCl.sub.3 and trapped Cl.sub.2, are left behind after the ARC layer has been removed. These cause corrosion of the bonding pad when exposed to atmospheric moisture. The polymer layer deposited immediately after the pad surface is exposed by the etchant, provides a temporary seal over the aluminum bonding pad, protecting it from exposure to moisture during subsequent processing steps.

Process for preventing corrosion of aluminum bonding pads after

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Hsinchu, Taiwan

Fang-Jen Hsu