Silicon Storage Technology, Inc.

Fan Luo

Hieu Van Tran

Nhan Do

Thuan Vu

Anh Ly

Stanley Hong

Stephen Trinh

Jinho Kim

Catherine Decobert

Yuri Tkachev

Serguei Jourba

Parviz Ghazavi

Bruno Villard

Gilles Festes

Bernard Bertello

Jean Francois Thiery

Cynthia Fung

Latt Tee

Numerous examples are disclosed of programming multiple rows in an array in an artificial neural network as part of a single programming operation. In one example, a method comprises ramping up an output of a high voltage generator to a first voltage level; while maintaining the output of the high voltage generator at the first voltage level, programming a plurality of words of K rows of memory cells in an array of memory cells using the output of the high voltage generator, where K>1; and after the programming, ramping down the output of the high voltage generator to a second voltage level.

Multiple row programming operation in artificial neural network array

A method of testing non-volatile memory cells formed on a die includes erasing the memory cells and performing a first read operation to determine a lowest read current RCfor the memory cells and a first number Nof the memory cells having the lowest read current RC. A second read operation is performed to determine a second number Nof the memory cells having a read current not exceeding a target read current RC. The target read current RCis equal to the lowest read current RCplus a predetermined current value. The die is determined to be acceptable if the second number Nis determined to exceed the first number Nplus a predetermined number. The die is determined to be defective if the second number Nis determined not to exceed the first number Nplus the predetermined number.

Method of determining defective die containing non-volatile memory cells

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Fremont, CA, United States of America

Fan Luo