Taiwan Semiconductor Manufacturing Comp. Ltd.

National Taiwan University

Fan-Hung Liu

Minghwei Hong

Chi-Te Liang

A multi-layered semiconductor device and method of manufacture are provided. In an embodiment a first semiconductor layer, a first insulator layer, a second semiconductor layer, a second insulator layer, and a third semiconductor layer are formed over a substrate. A first transistor comprises the first semiconductor layer, the first insulator layer, and the second semiconductor layer, and a second transistor comprises the second semiconductor layer, the second insulator layer, and the third semiconductor layer.

Growing community of inventors

Taipei, Taiwan

Fan-Hung Liu