Finisar Corporation

Shanghai Hua Hong Nec Electronics Company, Limited

Shanghai United Imaging Healthcare Co., Ltd.

Micro Focus Lcc

Ii-Vi Delaware, Inc.

Bcd Semiconductor Manufacturing Co., Ltd.

Shanghai Hua Nec Electronics Co., Ltd.

Fan Chen

Fahua Lan

Huiping Li

Wensheng Qian

Xiaolin Chen

Xiongbin Chen

Kevin Dapeng Zhang

Tzuyin Chiu

Maofeng Gu

Steven James Frisken

Jun Hu

Jiangtao Zhang

Tao Wang

Donghua Liu

Jing Shi

Wenting Duan

Haifang Zhang

Jia Pan

Kai Xue

YungChieh Fan

TungYuan Chu

Zhenli Wen

Yang Bu

Xucheng Wang

Jiong Xu

Fang Liu

Ying Lin Cai

Yang Liu

Xin Wu

Zhengliang Zhou

Chaoqun Sun

Clement Arnaud Gaston Claude

Keran Zhou

Eyal Fingold

Yongcheng Wang

Qanqing Wu

Dapeng Kevin Zhang

Juyou Du

Haifeng Ji

Weilong Cui

Keran Xue

Yongkang Hu

David Peer

Dongshen Han

The present disclosure is related to systems and methods for subject positioning. The method includes generating a reference subject model of a subject to be scanned by a medical device based on feature information of the subject and a scan protocol of the subject. The method includes generating a target subject model by performing one or more rendering operations on the reference subject model based on at least one rendering parameter associated with an image capturing device. The method includes generating a positioning result by integrating the target subject model with image data related to a scan scene of the subject captured by the image capturing device. The method includes positioning the subject based on the positioning result.

Systems and methods for subject positioning

The present disclosure relates to systems and methods for image storage. The methods may include obtaining a first image of a subject. The methods may further include obtaining a second image of the subject. The second image may include scan status information of the subject. The scan status information may be associated with a status of the subject when the first image is acquired. And The methods may also include storing the second image correspondingly with the first image.

Systems and methods for image storage

A reinforced multi-body optical device that in one embodiment includes a multi-body optical device having a thickness that is less than or equal to about 1.0 millimeter and a supporting plate bonded without epoxy to the multi-body optical device. In an embodiment the supporting plate has a coefficient of thermal expansion (CTE) that is within about 0.5 parts per million of the CTE of the multi-body optical device.

Reinforced multi-body optical devices

Examples disclosed herein relate to application testing. The examples may enable identifying a set of tests for testing an application and identifying a set of attributes associated with a particular test of the set of tests. The set of attributes may comprise an average execution duration of the particular test, a last execution time of the particular test, and a last execution status of the particular test. The examples may further enable determining attribute scores associated with individual attributes of the set of attributes and obtaining user-defined weights associated with the individual attributes. The examples may further enable determining a test score associated with the particular test based on the attribute scores and the user-defined weights associated with the individual attributes. The set of tests may be sorted based on the test score associated with the particular test. The sorted set of tests may be executed.

Application testing

In an example embodiment, a WDM array includes an optical filter, N common ports, N reflection ports, and N pass ports. The N common ports may be positioned to a first side of the optical filter. N may be greater than or equal to two. The N reflection ports may be positioned to the first side of the optical filter. The N pass ports may be positioned to a second side of the optical filter opposite the first side.

Wavelength division multiplexer array

An optical cell may include a first port coupled to a second port by an optical path. The optical cell may also include a compensator disposed in the optical path. The compensator may be rotatable about an axis. Rotating the compensator about the axis may vary a distance that the optical path passes through the compensator thereby changing the optical path length of the optical path.

Optical cell with wavelength compensator

In an embodiment, a polarization-dependent loss (PDL) compensator includes a substrate, an anti-reflective coating, and a partial reflective coating. The substrate has an input surface and an output surface opposite the input surface. The anti-reflective coating is formed on the output surface. The partial reflective coating is formed on the input surface. The PDL compensator may include PDL that depends on an incident angle of an optical signal with respect to the partial reflective coating.

Polarization-dependent loss compensator

Disclosed in one example embodiment is a method for fabricating a reinforced multi-body optical device. One method involves applying a coating to sides of an interior plate and bonding two plates to either side of the interior plate. The bonded plates are diced at an angle that is not orthogonal to the bonded plates. The top and bottom portions of a diced section are removed to form a multi-body polarization beam splitter (PBS) having a generally rectangular perimeter. A supporting plate is bonded to the multi-body PBS to form a reinforced multi-body PBS, wherein the supporting plate has a CTE that is within about 0.5 parts per million of the CTE of the multi-body PBS. The multi-body PBS is grinded to reduce the thickness of the multi-body PBS.

A parasitic lateral PNP transistor is disclosed, in which, an N-type implanted region formed in each of two adjacent active regions forms a base region; a P-type doped polysilicon pseudo buried layer located under a shallow trench field oxide region between the two active regions serves as an emitter; and a P-type doped polysilicon pseudo buried layer located under each of the shallow trench field oxide regions on the outer side of the active regions serves as a collector region. The transistor has a C-B-E-B-C structure which alters the current path in the base region to a straight line, which can improve the current amplification capacity of the transistor and thus leads to a significant improvement of its current gain and frequency characteristics, and is further capable of reducing the area and increasing current intensity of the transistor. A manufacturing method of the parasitic lateral PNP transistor is also disclosed.

Parasitic lateral PNP transistor and manufacturing method thereof

Reinforced multi-body optical devices. In one example embodiment, a method for fabricating a reinforced multi-body optical device includes various acts. First, a supporting plate is bonded, using pressure and heat, to a multi-body optical device to form a reinforced multi-body optical device. The supporting plate has a coefficient of thermal expansion (CTE) that is within about 0.5 parts per million of the CTE of the multi-body optical device. Then, the multi-body optical device is ground to reduce the thickness of the multi-body optical device.

A silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) is disclosed, including: a substrate; two field oxide regions formed in the substrate; two pseudo buried layers, each being formed under a corresponding one of the field oxide regions; a collector region formed between the field oxide regions, the collector region laterally extending under a corresponding one of the field oxide regions and each side of the collector region being connected with a corresponding one of the pseudo buried layers; a matching layer formed under both the pseudo buried layers and the collector region; and two deep hole electrodes, each being formed in a corresponding one of the field oxide regions, the deep hole electrodes being connected to the corresponding ones of the pseudo buried layers for picking up the collector region. A manufacturing method of the SiGe HBT is also disclosed.

Silicon-germanium heterojunction bipolar transistor and manufacturing method thereof

An embodiment of the invention includes a tunable optical dispersion compensator (TODC) comprising a first beam displacer on an optical path, wherein the first beam displacer separates an optical signal into a first beam and a second beam, and one or more polarizing beam splitters on the optical path, wherein the one or more polarizing beam splitters keep the first beam and the second beam on the optical path. The TODC also comprises one or more etalons on the optical path, wherein the one or more etalons are tunable to introduce a group delay in the first beam and the second beam, and a reflecting mirror on the optical path, wherein the reflecting mirror returns the optical signal back along the optical path. The TODC further comprises a second beam displacer, wherein the second beam displacer combines the first beam and the second beam into an output optical signal.

Multichannel tunable optical dispersion compensator

In some example embodiments, a demodulator may include an input polarization beam splitter (IPBS), input half waveplate (IHWP), cubical polarization beam splitter (CPBS), first reflector (R), second reflector (R), first quarter waveplate (QWP), second quarter waveplate (QWP), beam displacer (BD), output half waveplate (OHWP), and output polarization beam splitter (OPBS). The CPBS may be positioned to receive an output from IPBS. The IHWP may be positioned between IPBS and CPBS. The Rmay be positioned to receive and return a first output from CPBS. The QWPmay be positioned between CPBS and R. The Rmay be positioned to receive and return a second output from CPBS. The QWPmay be positioned between CPBS and R. The BD may be positioned to receive a third output from CPBS. The OPBS may be positioned to receive an output from BD. The OHWP may be positioned between BD and OPBS.

Athermal DQPSK and/or DPSK demodulator

Growing community of inventors

Shanghai, China

Fan Chen