Robert Boschgmbh

Falk Roewer

Amin Jemili

Johannes Classen

Torsten Ohms

Ruslan Khalilyulin

David Slogsnat

Clemens Jurgschat

Gregor Wetekam

A microelectromechanical acceleration sensor system including a microelectromechanical acceleration sensor element for detecting acceleration values acting on the acceleration sensor element, a sigma-delta analog-to-digital converter for converting the analog output signals of the acceleration sensor element into digital output signals, and a first signal generator element and a second signal generator element. The first signal generator element is connected between the acceleration sensor element and the analog-to-digital converter and being configured to apply a predetermined signal value to the output signals of the acceleration sensor element. The signal value of the first signal generator element corresponding to an acceleration value that is greater than the average gravity acceleration, and the second signal generator element being connected in a signal processing direction downstream from the analog-to-digital converter and being configured to correct the digital output signals of the analog-to-digital converter by the signal value of the first signal generator element.

Microelectromechanical acceleration sensor system

A stress and/or strain measurement cell for a stress and/or strain measurement system. The cell includes a reference contact, a sensor contact and a first current mirror circuit which is integrated into a semiconductor material and has a first conduction path connectable or connected to the reference contact and a second conduction path connectable or connected to the sensor contact. The first conduction path includes a first transistor and the second conduction path includes a second transistor. A first crystal direction of the semiconductor material oriented perpendicular to a first inversion channel of the first transistor is definable for the first inversion channel and a second crystal direction of the semiconductor material oriented perpendicular to a second inversion channel of the second transistor is definable for the second inversion channel. The first crystal direction of the semiconductor material is inclined relative to the second crystal direction of the semiconductor material.

Direction-dependent stress and/or strain measurement cell for a stress and/or strain measurement system

A coupling of two electronic apparatuses for a wireless information exchange. The coupling is authenticated through the evaluation of motion patterns previously executed by the apparatuses.

Electronic apparatus, system for wireless information exchange, and method for coupling two apparatuses

An oscillator device based on a ring oscillator, in which temperature-dependent fluctuations in the frequency of the clock signal of a ring oscillator can be compensated by adapting the supply voltage of the ring oscillator. For this purpose, the supply voltage of the ring oscillator is adapted as a function of an ambient temperature, using a voltage supply circuit.

Oscillator device

A sensor system including a detection unit, which is designed to detect at least one physical variable and to output corresponding measured values, and a communication interface, which includes a communication unit and is designed to output the detected measured values at least in a normal operating mode, and which is designed to receive a data signal, which includes a clock signal, the communication unit being designed to use the clock signal as the operating clock in an energy-saving operating mode. Furthermore, a corresponding method is described.

Sensor system, including detection and communication units for detecting and communication measured values, and a method for operating the sensor system

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Reutlingen-Betzingen, Germany

Falk Roewer