Von Ardenne Anlagentechnik Gmbh

Other

Fraunhofer-gesellschaft Zur Foerderung Der Angewandten Forschung E.v.

Von Ardenne Asset Gmbh &co. Kg

Von Ardenne Gmbh

Falk Milde

Hans-Christian Hecht

Matthias List

Joerg Fiukowski

Holger Proehl

Christoph Koeckert

Klaus Goedicke

Siegfried Schiller

Volker Kirchhoff

Fred Fietzke

Michael Hofmann

Matthias Fahland

Jonathan Reschke

Torsten Winkler

Goetz Grosser

Henry Morgner

Wolfgang Erbkamm

Manfred Neumann

Goetz Teschner

Joern Brueckner

Enno Mirring

Christoph Koekert

Frank Meissner

Andreas Fickert

Disclosed herein are devices, systems, and methods for transporting a substrate for vacuum processing. The transport may be provided by a substrate carrying device that includes a support area by which a substrate carrier may be moveably supported. The substrate carrying device includes a plurality of electrodes that are galvanically separated from one another. The substrate carrying device includes a plurality of substrate carrying regions arranged consecutively in series with respect to one another, each substrate carrying region including an electrode of the plurality of electrodes and also including a substrate receiving device configured to receive a substrate placed in the substrate carrying region, preferably in physical contact with the electrode.

Device and method for substrate transport in vacuum processing systems

A method is provided for coating a substrate with the aid of a magnetron cathode and two electrodes which are alternately impinged upon by a positive potential and a negative potential. Also disclosed is an assembly for coating a substrate, comprising a vacuum chamber, a magnetron cathode, two electrodes, and a voltage source. A negative potential is generated at a level that is no greater than the level of the cathode potential, thus preventing the electrode that is to be cleaned from being stripped to a greater extent than the same was coated in the previous half-wave. The magnetron cathode and the electrodes are connected to the voltage source via switching elements without being galvanically such that a negative and a positive voltage generated from the voltage source can be alternatively applied to the electrodes, the level of said voltage being no greater than the cathode voltage.

Redundant anode sputtering method and assembly

A layer system that can be annealed comprises a transparent substrate, preferably a glass substrate, and a first layer sequence which is applied directly to the substrate or to one or more bottom layers that are deposited onto the substrate. The layer sequence includes a substrate-proximal blocking layer, a selective layer and a substrate-distal blocking layer. Also provided is a method for producing a layer system that can be annealed and has a sufficient quality even under critical climatic conditions and/or undefined conditions of the substrate. During the heat treatment (annealing, bending), the color location of the layer system is maintained substantially stable and the color location can be widely varied at a low emissivity of the layer system. For this purpose, a first dielectric intermediate layer is interposed between the substrate-proximal blocking layer and the selective layer and is configured as a substoichiometric gradient layer.

Layer system that can be annealed and method for producing the same

An infrared radiation reflecting transparent layer system on a transparent substrate and a method for producing same is provided. The infrared radiation reflecting layer system comprises an infrared radiation reflecting layer sequence which includes a selective function usually consisting of a noble metal, mostly silver, or an alloy thereof and having a good selective reflectivity in the infrared range. The layer sequence is supplemented by at least one transparent dielectric layer of an oxynitride of a metal, a semiconductor or a semiconductor alloy having a low to moderate refractive index arranged directly on the substrate or above the infrared radiation reflecting layer sequence.

Infrared reflecting layer system for transparent substrate

Annealable layer system

A highly efficient getter pump with low maintenance requirements is applied to a vacuum coating installation, allowing a substrate to be coated to remain uncontaminated by a dusting of getter material. The getter pump comprises a pump housing with an exposure opening. The housing has a getter body, of getter material that essentially closes the exposure opening and can move in relation to the exposure opening. An inner sub-section of the surface of the getter body points towards the interior of the pump housing and an outer sub-section points towards the exterior of the pump housing through the exposure opening. The positions of the inner and outer sub-sections are interchangeable by movement of the getter body. The getter pump is equipped with a device for removing getter material from the inner sub-section.

Getter pump and vacuum coating installation comprising a getter pump

A layer system that filters sun and heat can be applied to glass by a vacuum coating process. The system comprises at least one series of metal layers in addition to a respective series of lower dielectric layers and a respective series of upper dielectric layers. At least one series of metal layers and one series of upper and lower dielectric layers are configured as a sandwich system, wherein one metal layer is encapsulated by an upper and a lower intermediate layer consisting of hypostoichiometrically nitrided or oxidized metal of the metal layer and sandwich systems of the series of layers contain individual sandwich layers of a stoichiometric and hypostoichiometric oxide or nitride of a metal or semiconductor. An oxygen or nitrogen deficit of the sandwich layers increases towards a neighboring sandwich system and the oxide and nitride layers are produced in a vacuum coating process.

Thermally treatable layer assembly that filters sun and heat and method for producing the same

A system for coating band-shaped material, where the band-shaped material travels through at least one process chamber in which there is a vacuum, and at least one cooling roller. On the peripheral surface of each cooling roller are at least two magnetron sputter sources that are arranged separate from one another in magnetron chambers, which are formed by separate magnetron chamber walls and allow each chamber to be evacuated, so the pressure in the magnetron chamber can be maintained higher than that in the process chamber. The magnetron chamber walls and the magnetron sputter sources can be mounted on a common carriage, which is displaceable parallel to the cooling roller axis. The result is the reduction in the maintenance costs in cleaning of the magnetron chamber walls and at the same time improvement of the separation of gas between the magnetron chambers and the process chamber.

Vacuum coating apparatus

Process for monitoring an alternating-voltage discharge between the electrodes of a double electrode and an apparatus. The process includes measuring values of at least one of a discharge current and a discharge voltage for each half-wave within an alternating-voltage discharge period, determining a difference between the measured values of a second half-wave and the measured values of the first half-wave, and comparing the determined differences to specific tolerance values. When the specific tolerance values are exceeded by the determined differences, a power supply is reduced, whereby the discharge is at least briefly suppressed. The apparatus includes a double magnetron including first and second targets arranged to form a double electrode, and a power supply coupled to supply power to the first and second targets. The power supply includes a measurement unit for measuring values of at least one of discharge current and discharge voltage, such that at least one of a discharge current and a discharge voltage for each half-wave within an alternating-voltage discharge period is measured. A device for determining a difference between the measured values of a second half-wave and the measured values of the first half-wave is provided, as well as a device for comparing the determined differences to specific tolerance values, and a device for at least briefly suppressing the discharge when the specific tolerance values are exceeded by the determined differences.

Method for monitoring alternating current discharge on a double electrode and apparatus

Process for ion-supported vacuum coating

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Dresden, Germany

Falk Milde