Arm Limited

University of Michigan

Fakhruddin Ali Bohra

Lalit Gupta

Shri Sagar Dwivedi

Vivek Nautiyal

Jitendra Dasani

Bo Zheng

Satinderjit Singh

Gus Wai-Yan Yeung

El Mehdi Boujamaa

Nicolaas Klarinus Johannes Van Winkelhoff

Yew Keong Chong

David Theodore Blaauw

Andy Wangkun Chen

Jungtae Kwon

Dennis Michael Chen Sylvester

Massimo Alioto

Abhishek B Akkur

Nimish Sharma

Gaurav Rattan Singla

Mahmood Khayatzadeh

George McNeil Lattimore

Mudit Bhargava

Pranay Prabhat

Cyrille Nicolas Dray

Young Suk Kim

Vikash

Rajiv Kumar Sisodia

Rajiv Kumar Roy

Srinivasan Srinath

Navin Agarwal

Yicong Li

Manish Trivedi

Hetansh Pareshbhai Shah

Sumant Kumar Thapliyal

Manoj Puthan Purayil

Daksheshkumar Maganbhai Malaviya

Yeon Jun Park

Ashish Bhardwaj

Durgesh Kumar Dubey

Ambica Ashok

Vidit Babbar

Sharryl Renee Dettmer

Various implementations described herein are related to a device having memory architecture having multiple bitcell arrays. The device may include column multiplexer circuitry coupled to the memory architecture via multiple bitlines for read access operations. The column multiplexer circuitry may perform read access operations in the multiple bitcell arrays via the bitlines based on a sense amplifier enable signal and a read multiplexer signal. The device may include control circuitry that provides the read multiplexer signal to the column multiplexer circuitry based on a clock signal and the sense amplifier enable signal so that the column multiplexer circuitry is able to perform the read access operations.

Column multiplexer circuitry

Various implementations described herein refer to a method for providing memory with one or more banks. The method may include coupling read-write column multiplexer circuitry to the memory via bitlines including coupling a write column multiplexer to the bitlines for write operations and coupling a read column multiplexer to the bitlines for read operations. The method may include performing concurrent read operations and write operations in the one or more banks of the memory with the write column multiplexer and the read column multiplexer via the bitlines.

Concurrent memory access operations

Various implementations described herein refer to a method for providing single port memory with multiple different banks having a first bank and a second bank that is different than the first bank. The method may include coupling multiple wordlines to the single port memory including coupling a first wordline to the first bank and coupling a second wordline to the second bank. The method may include performing multiple memory access operations concurrently in the single port memory.

Concurrent access techniques utilizing wordlines with the same row address in single port memory

Various implementations described herein are related to a device having memory circuitry having an array of memory cells. The device may include output circuitry coupled to the memory circuitry, and the output circuitry may have a first set of multiplexers that receives column data from the array of memory cells and provides first multiplexed output data. The device may include output interface circuitry coupled to the output circuitry, and the output interface circuitry may have a second set of multiplexers that receives the first multiplexed output data from the output circuitry and selectively provides second multiplexed output data based on a configurable mode of multiplexed operation.

Configurable multiplexing circuitry

Various implementations described herein are directed to an integrated circuit having clock generation circuitry that receives an input clock signal and provides a first clock signal having a first pulse width. The integrated circuit includes first pulse-stretching circuitry coupled between the clock generation circuitry and input latch control circuitry. The first pulse-stretching circuitry receives the first clock signal and provides a second clock signal to the input latch control circuitry based on an enable signal. The second clock signal has a second pulse width that is at least greater than the first pulse width. The integrated circuit may include second pulse-stretching circuitry coupled between the clock generation circuitry and read-write circuitry. The second pulse-stretching circuitry provides a third clock signal to the read-write circuitry based on the enable signal. The third clock signal has a third pulse width that is at least greater than the first pulse width.

Pulse stretcher circuitry

Various implementations described herein refer to a method for providing single port memory with a bitcell array arranged in columns and rows. The method may include coupling a wordline to the single port memory including coupling the wordline to the columns of the bitcell array. The method may include performing multiple memory access operations concurrently in the single port memory including performing a read operation in one column of the bitcell array using the wordline while performing a write operation in another column of the bitcell array using the wordline, or performing a write operation in one column of the bitcell array using the wordline while performing a read operation in another column of the bitcell array using the same wordline.

System device and method for providing single port memory access in bitcell array by tracking dummy wordline

Various implementations described herein are directed to an implementation of a higher order multiplexer using lower order multiplexers. In an embodiment, the implementation requires a slight modification to the existing circuitry design of the lower multiplexers. A plurality of multiplexers may be coupled with each other such that a common input port and output port is formed. Using an enable signal, only one of the coupled multiplexers may be enabled at a time while the remaining multiplexers are switched off. Therefore, upon receiving a select signal indicating an address of a memory cell, the lower multiplexers coupled together function as a higher order multiplexer in selecting the appropriate column corresponding to the memory cell.

Circuit architecture to derive higher mux from lower mux design

Various implementations described herein are directed to a device having memory circuitry with a core array of bitcells. The device may include write assist circuitry having passgates coupled to the bitcells via bitlines. The passgates may include a first passgate coupled to the bitcells via a first bitline and a second passgate coupled to the bitcells via a second bitline, and a gate of the second passgate may be coupled to the first bitline.

Write assist circuitry

Various implementations described herein are directed to a device having memory with an array of bitcells arranged in columns and rows, wherein a first number of columns represents a first number of output bits, and a second number of columns represents a second number of output bits. The device may include dummy wordline (DWL) circuitry having multiple DWL paths including a first DWL path disposed along the first number of columns and a second DWL path disposed along the second number of columns. The first DWL path has a shorter length than the second DWL path so as to allow for faster operation of the bitcells in the memory associated with the first number of output bits.

Dummy wordline design techniques

Various implementations described herein may refer to an integrated circuit using discharging circuitries for bit lines. In one implementation, an integrated circuit may include a memory array having memory cells, where the memory cells are arranged into columns and configured to be accessed using bit line pairs. The integrated circuit may also include discharging circuitries to selectively discharge the bit line pairs, where a respective discharging circuitry is coupled to a negative supply voltage node of a respective column of memory cells. The respective discharging circuitry may discharge a bit line pair of the respective column to a first voltage when the bit line pair is selected for a memory operation, and may discharge the bit line pair of the respective column to a second voltage when the bit line pair is not selected for a memory operation, where the second voltage is greater than the first voltage.

Integrated circuit using discharging circuitries for bit lines

Various implementations described herein are directed to an integrated circuit having multiple banks of memory cells and a local input/output (IO) component for each bank of the multiple banks. The integrated circuit may include multiple signal lines that are coupled to the multiple banks with the local IO components. At least one signal line of the multiple signal lines is wider than one or more of the other signal lines.

Routing structures for memory applications

Various implementations described herein refer to an integrated circuit having a bitcell coupled to a bitline and a column multiplexer device coupled to the bitline between the bitcell and an output of a write driver. The integrated circuit may include a first signal line coupled to a gate of the column multiplexor device that provides a first transition signal. The integrated circuit may include a second signal line coupled to an input of the write driver that provides a second transitioning signal, and the second transition signal transitions substantially similar to the first transitioning signal. The integrated circuit may include a coupling device coupled between the first signal line and the second signal line.

Coupling compensation circuitry

Various implementations described herein are directed to an integrated circuit having first dummy bitline circuitry with a first charge storage element and second dummy bitline circuitry coupled to the first dummy bitline circuitry, and the second dummy bitline circuitry has a second charge storage element. The integrate circuit may include decoupling circuitry coupled to the first dummy bitline circuitry and the second dummy bitline circuitry between the first charge storage element and the second charge storage element. The decoupling circuitry may operate to decouple the second charge storage element from the first charge storage element based on an enable signal.

Dummy bitline circuitry

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San Jose, CA, United States of America

Fakhruddin Ali Bohra