Rayvio Corporation

Faisal Sudradjat

Douglas A Collins

Yitao Liao

Robert C Walker

Li Zhang

Saijin Liu

Embodiments of the invention include a first semiconductor layer grown over a growth substrate and a plurality of pixels grown on the first semiconductor layer, each pixel including an active layer disposed between an n-type region and a p-type region. Trenches isolate individual pixels and form at least one sidewall for each pixel. A first metal layer in direct contact with the p-type region is disposed on a top surface of each pixel. A second metal layer in direct contact with the n-type region is disposed on a bottom surface of a trench adjacent to each pixel. An insulating layer electrically isolating the first and second metal layers is disposed on the sidewall of each pixel and is substantially conformal to the sidewall.

Pixel array of ultraviolet light emitting devices

Embodiments of the invention include a light emitting diode (UVLED), the UVLED including a semiconductor structure with an active layer disposed between an n-type region and a p-type region. The active layer emits UV radiation. The UVLED is disposed on a mount. A transparent encapsulant is disposed over the UVLED. The transparent encapsulant has an angled sidewall.

Ultraviolet emitting device with shaped encapsulant

An LED device capable of emitting electromagnetic radiation ranging from about 200 nm to 365 nm, the device. The device includes a substrate member, the substrate member being selected from sapphire, silicon, quartz, gallium nitride, gallium aluminum nitride, or others. The device has an active region overlying the substrate region, the active region comprising a light emitting spatial region comprising a p-n junction and characterized by a current crowding feature of electrical current provided in the active region. The light emitting spatial region is characterized by about 1 to 10 microns. The device includes an optical structure spatially disposed separate and apart the light emitting spatial region and is configured to facilitate light extraction from the active region.

Semiconductor device and a method of making a semiconductor device

The present invention provides an LED device capable of emitting electromagnetic radiation ranging from about 200 nm to 365 nm and a method. The device has a substrate member, the substrate member being selected from sapphire, silicon, quartz, gallium nitride, gallium aluminum nitride, or others and an active region overlying the substrate region. The active region comprises a light emitting spatial region comprising a p-n junction and characterized by a current crowding feature of electrical current provided in the active region. The device has an optical structure spatially disposed separate and apart the light emitting spatial region and is configured to facilitate light extraction from the active region.

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Alameda, CA, United States of America

Faisal Sudradjat