General Electric Company

Faisal Saeed

Gregory Scott Zeman

Abdelaziz Ikhlef

Habib Vafi

Jeffrey Alan Kautzer

In one embodiment, a radiation detector is provided. The radiation detector includes a scintillator layer that converts incident radiation into lower energy optical photons. The scintillator layer includes a plurality of pixels formed by one or more dividers, and the one or more dividers form one or more radiation pathways through the scintillator layer. The radiation detector also includes a photodetector layer that detects the lower energy photons generated by the plurality of pixels within the scintillator layer and signal electronics that receive signals generated by the photodetector layer. The radiation detector also includes one or more barrier layers disposed between the photodetector layer and the signal electronics. Each barrier layer of the one or more barrier layers includes electrically conductive vias containing a high Z material that blocks radiation from the one or more radiation pathways from reaching the signal electronics.

Radiation detector with stacked barrier layers and method of forming the same

A photodiode assembly includes a semiconductor substrate, a photodiode cell, a ground diffusion region, and a guard band. The photodiode cell includes a first volume of the substrate doped with a first type of dopant. The diffusion region includes a second volume of the substrate that is doped with a second, opposite type of dopant. The guard band is disposed in the substrate and at least partially extends around an outer periphery of the photodiode cell. The guard band includes a third volume of the substrate that is doped with the first type of dopant. At least one of the ground diffusion region or the guard band is conductively coupled with a ground reference to conduct one or more of electrons or holes that drift from the photodiode cell through the substrate. The guard band is disposed closer to the photodiode cell than the ground diffusion region.

Photosensor assembly and method for providing a photosensor assembly

In some embodiments, an optical mask for a CT detector is disclosed. In some embodiments, the mask is intercalated between a photodiode array and a scintillator array forming the CT detector. In some embodiments, the optical mask may extend along one or more axes and differentially absorbs and/or reflects light emitted from the scintillators at edges of photodiodes forming the diode array, with less absorption or reflection at edges of tiled die forming the diode array than in central portions of each of the die. Through selective absorption and/or reflection, transference of light photons from a scintillator to the photodiode corresponding to a neighboring scintillator is spatially modified, at least partially compensating for spatial differences in crosstalk signals between adjacent pairs of photodiode/scintillator cell elements. This reduction in differential crosstalk reduces artifacts in a reconstructing data descriptive of internal portions of a subject, which improves diagnostic value of the data.

Detector array and system

An electronic assembly having a first layer and a second layer is disclosed. The first layer has a first interface surface and a plurality of cavities formed in the first interface surface. The second layer has a second interface surface and a plurality of projections disposed at the second interface surface, where the plurality of projections are aligned with and disposed at the plurality of cavities. An electrically conductive connecting material is disposed at the plurality of cavities such that the connecting material connects the plurality of projections to the respective plurality of cavities.

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Waukesha, WI, United States of America

Faisal Saeed