Silicon Motion, Inc.

Fahao Li

A method of searching for read voltages includes: respectively reading a memory segment through read voltages to obtain a sampling data, wherein the read voltages are composed of pairs of adjacent read voltages, and the memory segment is from a non-volatile flash memory; counting the number of first bits in each sampling data, wherein the numbers of first bits correspond to the read voltages respectively; obtaining number differences of the first bits corresponding to the pairs of adjacent read voltages; calculating a coefficient matrix according to the read voltages and the differences of the number of first bits; calculating fitting values according to the read voltages and the coefficient matrix, wherein the fitting value corresponds to the read voltage respectively; and selecting a read voltage corresponding to a minimum value among the fitting values to read the memory segment to perform an error correction program.

Data storage device and searching method for reading voltage thereof

A method for performing data access control of a memory device and associated apparatus are provided. The memory device may be arranged to receive a plurality of host commands for performing data access according to the plurality of host commands, and perform a reading parameter optimization procedure to determine at least one optimized reading parameter, for maintaining correctness of data reading, for example, initialize a raw data indication reference, a temporary minimum reading parameter and a temporary maximum reading parameter, calculate the reading parameter to be equal to an average of the temporary minimum reading parameter and the temporary maximum reading parameter, read according to the reading parameter, for determining a raw data indication, and compare the raw data indication with the raw data indication reference, for selectively adjusting temporary reading parameters or determining an optimized reading parameter.

Method and apparatus for performing data access control of memory device with aid of reading parameter optimization

A method for performing data access control of a memory device and associated apparatus are provided. The method may include: receiving a plurality of host commands from a host device, for performing data access including data reading on the NV memory according to the plurality of host commands; and performing a reading parameter learning procedure to generate predicted data of a predicted reading voltage parameter offset regarding adjustment of a reading voltage parameter, for maintaining correctness of the data reading, for example: scanning for a best value, and adding latest information comprising the best value into a data set among one or more data sets in at least one reading-voltage control database; performing local linear regression according to the data set to update a reading voltage prediction function corresponding to a reading voltage prediction model; and generating or updating the predicted data according to the reading voltage prediction function.

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Shenzhen, China

Fahao Li