Centre National De La Recherche Scientifique

Office National D'etudes Et De Recherches Aerospatiales (onera)

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

S.o.i.tec Silicon on Insulator Technologies

Office National D'etudes Et De Recherches Aerospatiales

Office Nathional D'etudes Et De Recherches Aerospatiales—onera—chemie De La Huniere

Centre National De La Recherche Scientifique-cnrs

Fabrice Pardo

Jean-Luc Pelouard

Riad Haidar

Patrick Bouchon

Jean-Jacques Greffet

François Marquier

Michaël Verdun

Simon Vassant

Alexandre Archambault

Jean-Jacques Yon

Grégory Vincent

Joël Deschamps

Stéphane Collin

Stephane Collin

Paul Chevalier

Quentin Levesque

Charlie Koechlin

Melania Lijadi

Christophe Dupuis

Philippe Bove

St&eacute;phane Collin

Antoine Bierret

Roland Teissier

Benjamin Portier

Emilie Steveler

Haidar Riad

A device for multispectral imaging in the infrared, suitable for detecting at at least one first and one second detection wavelength is provided. It comprises a detection matrix array comprising a set of elementary detectors of preset dimensions forming an image field of given dimensions; and an image-forming optic having a given aperture number (N) and a given focal length (F), which aperture number and focal length are suitable for forming, at any point of the image field, an elementary focal spot covering a set of at least two juxtaposed elementary detectors. The device furthermore comprises a matrix array of elementary metal-dielectric guided-resonance filters, which matrix array is arranged in front of the detection matrix array at a distance smaller than a focal depth of the optic, the dimensions of the elementary filters being such that each elementary focal spot formed at each point of the image field covers at least two elementary filters; and the elementary filters are optimised for pass-band transmission in spectral bands centred on two different central wavelengths, equal to two of said detection wavelengths.

Device and method for multispectral imaging in the infrared

A photodetector includes a Helmholtz resonator and a photosensitive structure that is placed in an electric-field-concentrating interval forming part of the Helmholtz resonator. Such a photodetector is in particular suitable for imaging applications. The wavelength of the radiation to be detected is determined by dimensions of the Helmholtz resonator, within a detection spectral interval of the photosensitive structure.

Photodetector with helmholtz resonator

According to one aspect, the invention relates to an element for quantum photodetection of an incident radiation in a spectral band centered around a central wavelength &#x3bb;, having a front surface intended for receiving said radiation, and including: a stack of layers of semiconductor material forming a PN or PIN junction and including at least one layer made of an absorbent semiconductor material having a cut-off wavelength &#x3bb;&#x3e;&#x3bb;, the stack of layers of semiconductor material forming a resonant optical cavity; and a structure for coupling the incident radiation with the optical cavity such as to form a resonance at the central wavelength &#x3bb;allowing the absorption of more than 80% in the layer of absorbent semiconductor material at said central wavelength, and an absence of resonance at the radiative wavelength &#x3bb;, wherein the radiative wavelength &#x3bb;is the wavelength for which, at operating temperature, the radiative recombination rate is the highest.

Quantum detection element with low noise and method for manufacturing such a photodetection element

According to one aspect, the present invention concerns a terahertz modulator () intended to be used in a given frequency band of use. The modulator comprises a semi-conductor polar crystal () presenting a Reststrahlen band overlapping said frequency band of use and presenting at least one interface with a dielectric medium, coupling means () allowing the resanant coupling of an interface phonon polariton (IPhP) supported by said interface and of an incident radiation () of pre-determined frequency lying in said frequency band of use and means of control () apt to modify the intensity of the coupling between said interface phonon polariton and said incident radiation () by modification of the dielectric function of the polar crystal in the Reststrahlen band of the polar crystal ().

Terahertz modulator

According to one aspect, the invention relates to a device () for controlling the phase of an incident optical wavefront of wavelength comprised in a spectral band of given use, comprising a substrate () that is at least partially transparent in said spectral band and a set of strips () arranged substantially perpendicularly to the surface of the substrate, characterized in that: said set of strips comprises an alternation of juxtaposed strips respectively made of a metal (), of a first dielectric () and of at least one second dielectric () different from the first dielectric, such as to form juxtaposed metal/multi dielectric/metal (MmultiDM) structures (S) of subwavelength widths (w), each structure forming a cavity having one or more propagation modes&#x2014;the respective thicknesses of the strips made of the first dielectric and of the second dielectric(s) are adjusted in each of said MmultiDM structures to induce a local shift (&#x394;&#x3a6;) in the phase of the wavefront, the local phase shift being dependent on the effective index of the mode(s) able to propagate in said cavity.

Device for controlling the phase of an optical wavefront having juxtaposed metal-multidielectric-metal structures to induce a local shift

According to one aspect, the invention relates to a microbolometer array for thermal detection of light radiation in a given spectral band, comprising a supporting substrate and an array of microbolometers () of given dimensions, arranged in an array. Each of said microbolometers comprises a membrane () suspended above said supporting substrate, said membrane consisting of an element () for absorbing the incident radiation and a thermometric element () in thermal contact with the absorber, electrically insulated from said absorber element. The absorber element comprises at least one first metal/insulator/metal (MIM) structure comprising a multilayer of three superposed films of submicron-order thickness i.e. a first metallic film (), a dielectric film (), and a second metallic film (), said MIM structure being able to have a resonant absorption of said incident radiation at at least one wavelength in said spectral band. The area of the microbolometer pixel covered by said membrane () is less than or equal to half of the total area of the microbolometer pixel.

Microbolometer array with improved performance

According to a first aspect of the invention, the invention relates to a terahertz detection cell for detecting radiations having frequencies within a given spectral detection band, said cell comprising: a polar semi-conductor crystal structured such that it forms at least one slab of crystal, said crystal () having a Reststrahlen band covering said spectral detection band, and comprising at least one interface with a dielectric means; coupling means obtained by the slab structure (), each slab forming an optical antenna, enabling the resonant coupling of an interface phonon polariton (IPhP) supported by said interface and an incident radiation having a frequency within the spectral detection band; and at least one first and one second connection terminal () that are in electrical contact respectively with a first and a second end of the interface, said ends opposing each other, and said connection terminals to be connected to an electrical reading circuit for measuring the variation of the impedance of the crystal between the opposing ends of the interface.

Terahertz detection cell

The invention concerns a heterojunction bipolar transistor comprising a support, and epitaxially grown from said support, at least: one collecting, respectively emitting, layer; at least one base layer; and at least one emitting, respectively collecting, layer. The collecting, respectively emitting, layer comprises: at least one first undercoat contacted with said base layer, substantially of similar composition as said emitting, respectively collecting, layer; and at least one second undercoat on the side opposite said base layer relative to said first undercoat.

Method for making a heterojunction bipolar transistor

This invention relates to an MSM type photo-detection device designed to detect incident light and comprising reflecting means () superposed on a support (), to form a first mirror for a Fabry-P&#xe9;rot type resonant cavity, a layer of material () that does not absorb light, an active layer () made of a semiconducting material absorbing incident light and a network () of polarization electrodes collecting the detected signal. The electrodes network is arranged on the active layer and is composed of parallel conducting strips at a uniform spacing at a period less than the wavelength of incident light, the electrodes network forming a second mirror for the resonant cavity, the optical characteristics of this second mirror being determined by the geometric dimensions of the said conducting strips. The distance separating the first mirror from the second mirror is determined to obtain a Fabry-P&#xe9;rot type resonance for incident light between these two mirrors.

MSM type photodetection device with resonant cavity comprising a mirror with a network of metallic electrodes

Vertical metal-semiconductor microresonator photodetecting device and production method thereof

Growing community of inventors

Vitry-sur-Seine, France

Fabrice Pardo