Stmicroelectronics S.r.l.

Fabio Zara

Antonio Giuseppe Grimaldi

Fabio Russo

An embodiment of a power device comprising and formation of at least one gate region, of at least one buried source region, of at least one body region and of at least one source region; at least one body/source contact and at least one buried source contact; and formation of a source contact region and of a gate contact region through deposition. An embodiment of the method also comprises formation of the at least one gate region and of the at least one buried source region, electrically insulated, through a single deposition of a conductive filling material on an epitaxial layer, on vertical walls of the trench and within the empty region; and through etching of the conductive filling material forming a first spacer and a second spacer, suitable for serving as a gate electrode and forming a buried source electrode within the empty region.

Method for manufacturing a power device being integrated on a semiconductor substrate, in particular having a field plate vertical structure and corresponding device

An embodiment of a charge-balance power device formed in an epitaxial layer having a first conductivity type and housing at least two columns of a second conductivity type, which extend through the epitaxial layer. A first and a second surface region of the second conductivity type extend along the surface of the epitaxial layer on top of, and in contact with, a respective one of the columns, and a second and a third surface region of the first conductivity type extends within the first and the second surface region, respectively, facing the surface of the epitaxial layer. The columns extend at a distance from each other and are arranged staggered to one another with respect to a first direction and partially facing one another with respect to a second direction transversal to the first direction.

Charge-balance power device comprising columnar structures and having reduced resistance, and method and system of same

A charge-balance power device formed in an epitaxial layer having a first conductivity type and housing at least two columnar structures of a second conductivity type, which extend through the epitaxial layer. A first surface region of the second conductivity type extends along the surface of the epitaxial layer on top of, and in contact with, the columns, and a second surface region of the first conductivity type extends within the first surface region, and also faces the surface of the epitaxial layer. The columns extend at a distance from one another from the first surface region so as to delimit between them an epitaxial portion that defines a current path so as to reduce the on-resistivity of the device.

Charge-balance power device comprising columnar structures and having reduced resistance

An embodiment of a method for manufacturing a power device integrated on a semiconductor substrate. The method includes photo-lithography and etching of an epitaxial layer for the formation of at least one deep trench; deposition of a dielectric layer with partial filling of the at least one trench; complete filling of the at least one trench with a layer of sacrificial material; selective etching of the dielectric layer with consequent retrocession below the layer of sacrificial material; selective etching of the layer of sacrificial material with consequent formation of an empty region within the at least one trench; and growth of a layer of gate oxide; formation of at least one gate region, of at least one buried source region, of at least one body region and of at least one source region.

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Mascalucia, Italy

Fabio Zara