Ferroelectric Memory Gmbh

Fabio Tassan Caser

Marko Noack

Stefano Sivero

Rashid Iqbal

Alessandro Palludo

Disclosed herein are devices, methods, and systems for operating a sense amplifier comprising a plurality of transistors connected in a cascode configuration. The plurality of transistors are configured to sense, in a read operation mode, a switching signal from the state-programmable memory element, and to apply, in a write operation mode, a programming voltage level to the state-programmable memory element. The plurality of transistors are configured to receive a supply voltage at, in the read operation mode, a first supply voltage level that is lower than the programming voltage level and at, in the write operation mode, the programming voltage level, and to operate the sense amplifier in the read operation mode and the write operation mode with no more than a maximum operational voltage level across each of the plurality of transistors that is less than the programming voltage level.

Low-voltage sense amplifier for reading a state-programmable memory element

A voltage converter circuit may include: a first input node; a second input node; a first output node; a second output node; one or more charge pumps that convert a first input voltage supplied to the first input node up to a first output voltage and convert a second input voltage supplied to the second input node down to a second output voltage; and a control circuit to control the one or more charge pumps according to two operational modes. In the first operation mode, the control circuit supplies the first input voltage to the first input node, leaves the second input node floating, and outputs the first output voltage at the first output node. In the second operation mode, the control circuit supplies the second input voltage to the second input node, leaves the first input node floating, and outputs the second output voltage at the second output node.

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Dresden, Germany

Fabio Tassan Caser