Alcatel

Fabienne Gaborit

Jean-Yves Emery

Leon Goldstein

Christopher Janz

B&eacute;atrice Dagens

Fran&ccedil;ois Dorgeuille

The invention relates to a semi-conductor optical amplifier insensitive to the polarization of light. The active layer (,) of this amplifier is made up of an alternating series of solid sub-layers alternately under tensile stress (,) and compressive stress (,) and having the same forbidden band-width. The sub-layers under tensile stress (,) favour the propagation of the TM mode of polarization of light and the sub-layers under compression (,) favour the propagation of the TE mode of polarization of light. In addition, the thicknesses of the sub-layers have values which ensure equal gains G(TE) and G(TM) for the active layer.

Semi conductor optical amplifier

An active structure in the semiconductor die of an amplifier or converter includes a plurality of stacked active layers with different compositions. The different compositions lead to a spectral offset between the respective gain bands of the layers which widens the gain band of the amplifier or the optical bandwidth of the converter. Applications include fiber optic telecommunication networks.

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Limours, France

Fabienne Gaborit