Saint-gobain Glass France

Saint-gobain Performance Plastics Corporation

Saint-gobain Cristaux Et Detecteurs

Fabien Lienhart

Vincent Sauvinet

Vincent Chery

Antoine Diguet

Yongzhong Wang

Charles Leyder

Robrecht Moerkerke

Li-Ya Yeh

Eric E Mattmann

Simon Mazoyer

Guillaume Lecamp

Pascal Reutler

François-Julien Vermersch

Matthias Alschinger

Matthieu Bilaine

Emilie Steers

Erwan Mahe

Martin Python

Wentao Xu

A composite film may include a first transparent substrate and a first anti-reflective coating overlying a first surface of the first transparent substrate. The first anti-reflective coating may include a first UV curable acrylate binder, a photo initiator component, and silica nanoparticles dispersed within the first anti-reflective coating. The first anti-reflective coating may further include a ratio AC1/AC1of at least about 0.01 and not greater than about 1.3. The composite film may further have a VLT of at least about 93.0% and a haze value of not greater than about 3%.

Composite film with anti-reflective coating

The present disclosure is directed to optically transparent and IR reflecting films having a metal oxide based composite layer which can synergistically improve the optical properties, solar properties, and production speed of the whole composite.

Optical film exhibiting improved light to solar gain heat ratio

Embodiments of the present disclosure are directed to thin conductive composites, such as biosensor electrodes, containing a polymeric film substrate a conductive layer disposed adjacent the substrate. The conductive layer includes Krypton and a conductive material. The conductive layer has an average thickness of no greater than about 150 nanometers. The conductive layer has a normalized thickness (t/&#x3bb;) of no greater than about 3.0. Further, the composite has a sheet resistance of no greater than about 97.077tohm/sq, where t represents the thickness of the conductive layer in nanometers.

Conductive thin film composite

A solar control composite has improved seasonal selectivity, allowing a greater amount of heat to be transmitted through the composite during the winter and a lower amount of heat transmitted through the composite during the summer.

Seasonal solar control composite

An OLED device includes a transparent anode, of sheet resistance R1, and a cathode, of sheet resistance R2, the ratio r=R2/R1 ranging from 0.01 to 2.5, a first anode electrical contact, a first cathode electrical contact, arranged above the active zone, and a reflector covering the active zone above an OLED system, and for each point B of the anode contact, the point B being in an edge of the first anodic region, on defining a distance D between B and the point C closest to the point B, and on defining a distance L between the point B and a point X of an opposite edge of the first anodic region from the first edge, and passing through Ci the following criteria are defined:

Back-emitting OLED device and method for homogenizing the luminance of a back-emitting OLED device

An OLED device includes an anode, which is transparent, anode of a sheet resistance R1, a cathode of sheet resistance R2, the ratio r=R2/R1 ranging from 0.1 to 5, a first anode contact and a second anode contact, spaced from and facing the first anode contact, and a first cathode electrical contact, which is: arranged above the active zone, offset from the first anode contact and from the second anode contact, at every point of the contact surface.

Back-emitting OLED device

This layered element, in particular for a photovoltaic device, includes a polymer layer, a moisture-sensitive layer, and a protective coating forming a moisture barrier inserted between the polymer layer and the moisture-sensitive layer. The protective coating includes an antireflection multilayer comprising at least two thin layers differing in refractive index from each other.

Layered element and photovoltaic device comprising such an element

An OLED device includes a transparent anode of given sheet resistance R, a cathode of given sheet resistance R, the ratio r=R/Rranging from 0.1 to 5, a first anode electrical contact and a first cathode electrical contact which is offset from the anode electrical contact, for any point Bof each anode contact, on defining a distance Dbetween the point Band a point Cof the contact surface which is closest to the point B, and on defining a distance Lbetween the point Band a point Xof a second edge of the active zone opposite from the first edge, passing through C, then the following criteria are defined:

The subject of the invention is a process for manufacturing an organic light-emitting diode device comprising at least one electrode based on an electrically conductive thin-film multilayer deposited on a substrate, in which the deposition of said multilayer comprises the following steps:

Method for manufacturing an OLED device

The subject of the invention is a substrate that can be used as a substrate for the epitaxial growth of layers based on gallium nitride and comprising a support material () coated on at least one of its faces with at least one multilayered stack comprising at least one zinc-oxide-based layer (). The substrate is coated with a semiconductor structure of III-N or II-VI type, and it is characterized in that placed between the support material () and said at least one zinc-oxide-based layer () is at least one intermediate layer () comprising oxides with at least two elements chosen from tin (Sn), zinc (Zn), indium (In), gallium (Ga) and antimony (Sb).

Substrate for the epitaxial growth of gallium nitride

A method for fabricating a textured single crystal including depositing pads made of metal on a surface of a single crystal. A protective layer is deposited on the pads and on the single crystal between the pads; and etching the surface with a first compound that etches the metal more rapidly than the protective layer is carried out. Processing continues with etching the surface with a second compound that etches the single crystal more rapidly than the protective layer; and etching the surface with a third compound that etches the protective layer more rapidly than the single crystal. The textured substrate may be used for the epitaxial growth of GaN, AlN or III-N compounds (i.e. a nitride of a metal the positive ion of which carries a +3 positive charge) in the context of the fabrication of LEDs, electronic components or solar cells.

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San Diego, CA, United States of America

Fabien Lienhart