Abb Research Ltd.

Fabian Zwick

Bo Bijlenga

Stefan Linder

Patrick Erne

The power semiconductor module ( ) comprises a housing ( ), a covering panel ( ) and at least two submodules ( ). The submodules ( ) each comprise at least one semiconductor chip, which has two main electrodes which are electrically conductively connected to main connections ( ) of the submodules. The submodules ( ) are arranged alongside one another, and one of their two main surfaces is pressed against the covering panel ( ) of the module. The submodules are electrically connected in series. The maximun blocking voltage of the module is doubled by connecting the submodules, which are arranged alongside one another, in series. This reduces the length and the costs of the stack for hihg-voltage switch since fewer components are required for the same blocking voltages, in particular fewer modules and cooling elements.

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Suhr, Switzerland

Fabian Zwick