Abb Power Grids Switzerland Ag

Abb Schweiz Ag

Hitachi Energy Ltd

Hitachi Energy Switzerland Ag

Fabian Fischer

Dominik Truessel

Samuel Hartmann

Milad Maleki

Dominik Trüssel

David Guillon

Harald Beyer

Daniel Schneider

Charalampos Papadopoulos

Lluis Santolaria

Remi-Alain Guillemin

Giovanni A Salvatore

Giovanni Salvatore

Andreas Roesch

Martin Bayer

Remi Alain Guillemin

A power module having an alignment part fixed on a lateral top surface (10T) of a semiconductor module component. The semiconductor module component has at least one terminal which—at least in places—is orientated vertically with respect to the lateral top surface of the semiconductor module component and for the purpose of alignment along lateral directions, is located at least partly within the at least one recessed portion. Along a vertical direction, the at least one terminalprotrudes beyond the at least one recessed portion. The at least one recessed portion is located on a side surface of the alignment part, wherein the at least one recessed portion is a vertical slot being an open recess on the side surface of the alignment part, and wherein the slot is not a through-hole being completely surrounded by inner walls of the at least one recessed portion in lateral directions.

Power module comprising a semiconductor module component and an alignment part, and method for forming the power module

A power semiconductor module includes a housing accommodating a power circuit with at least one power semiconductor chip, the housing providing at least two power terminals; a printed circuit board mounted to the housing and electrically connected to the power circuit for distributing auxiliary signals; and at least one auxiliary terminal mounted to the printed circuit board with a press-fit connection provided by a body of the auxiliary terminal.

Power semiconductor module

A power semiconductor module includes an insulating substrate with a top metallization layer; a semiconductor chip bonded to the top metallization layer; and a terminal welded with a foot to the top metallization layer and electrically interconnected to the semiconductor chip. At least one of the top metallization layer and a bottom metallization layer of the substrate provided opposite to the top metallization layer comprises a plurality of dimples, which are distributed in a connection region below and/or around the welded foot.

Power semiconductor module with dimples in metallization layer below foot of terminal

A housing of a power module includes: an encasing for encasing semiconductor elements inside the housing; a power terminal area on the encasing, on which a power terminal plate is provided; an auxiliary terminal area on the encasing at a lower level than the power terminal area; and an interconnecting member with a power terminal connector part and an auxiliary terminal connector part interconnected by a spring part, the spring part is aligned besides the power terminal plate; the interconnecting member is inserted with the power terminal connector part through an opening in the encasing below the power terminal plate, such that the spring part engages the power terminal area besides the power terminal plate and runs to the auxiliary terminal area and the auxiliary terminal connector part is disposed on the auxiliary terminal area.

Interconnecting member for power module

The present application provides a power semiconductor module, including a support which carries at least one power semiconductor device, the support together with the power semiconductor device is at least partly located in a housing, the support and the power semiconductor device are at least partly covered by a sealing material, additionally to the sealing material, a protecting material is provided in the housing, the protecting material is formed from silicon gel and the protecting material at least partly covers at least one of the support, the power semiconductor device and the sealing material.

Growing community of inventors

Baden, Switzerland

Fabian Fischer