Infineon Technologies Ag

Fabian Craes

Thorsten Meyer

Frank Singer

Francisco Javier Santos Rodriguez

Olaf Hohlfeld

Wolfgang Lehnert

Andreas Grassmann

Martin Mischitz

Barbara Eichinger

Christian Stahlhut

Ulrich Wilke

Harry Walter Sax

Frederik Otto

Carsten Ehlers

Michael Fuegl

Maik Lohmann

Fabien Thion

Steffen Hartmann

Christoph Bayer

A method of manufacturing a semiconductor package is provided. The method may include singulating a wafer including a plurality of dies fixed to an auxiliary carrier to generate dies having released side surfaces, covering at least the side surfaces of the dies with a passivation layer using a deposition process at a temperature below the melting temperature of the auxiliary carrier, keeping a gap between the passivation layers at the side surfaces of adjacent dies of the plurality of dies.

Method of manufacturing a semiconductor package, die, and die package

A method includes forming a first electrically conductive layer on a first side of a dielectric insulation layer, forming a structured mask layer on a side of the first electrically conductive layer that faces away from the dielectric insulation layer, forming at least one trench in the first electrically conductive layer, said at least one trench extending through the entire first electrically conductive layer to the dielectric insulation layer, forming a coating which covers at least the bottom and the side walls of the at least one trench, and removing the mask layer after the coating has been formed.

Method for producing a substrate

A semiconductor device and method for fabricating a semiconductor device, comprising a paste layer is disclosed. In one example the method comprises attaching a substrate to a carrier, wherein the substrate comprises a plurality of semiconductor dies. A layer of a paste is applied to the substrate. The layer above cutting regions of the substrate is structured. The substrate is cut along the cutting regions.

Method for fabricating a semiconductor device comprising a paste layer and semiconductor device

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Soest, Germany

Fabian Craes