Taiwan Semiconductor Manufacturing Comp. Ltd.

Fa-Wei Huang

Yu-Shao Cheng

Yu Shan Lee

A method of forming a semiconductor device includes forming a first layer over a substrate in a deposition chamber with a first deposition cycle and forming a second layer over the substrate in the deposition chamber with a second deposition cycle. The first deposition cycle includes flowing a first process gas over the substrate and flowing a second process gas over the substrate. The second deposition cycle includes flowing a third process gas over the substrate and flowing a fourth process gas over the substrate.

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Taichung, Taiwan

Fa-Wei Huang