Samsung Electronics Co., Ltd.

Rensselaer Polytechnic Institute

F Fred Schubert

Martin F Schubert

Min-Ho Kim

Jong Kyu Kim

Cheolsoo Sone

Sukho Yoon

Yongio Park

A nitride semiconductor light emitting device includes n-type and p-type nitride semiconductor layers; an active layer disposed between the n-type and p-type nitride semiconductor layers and having a structure in which a plurality of quantum barrier layers and one or more quantum well layers are alternately stacked; and an electron blocking layer disposed between the active layer and the p-type nitride semiconductor layer. The electron blocking layer has a superlattice structure in which two or more layers having different compositions are alternately stacked. An absolute value of a net polarization mismatch between a material, the material having a composition corresponding to an average composition of the superlattice structure, and a quantum barrier layer adjacent to the electron blocking layer among the plurality of quantum barrier layers is less than &#x2154; of an absolute value of a net polarization mismatch between AlGN(0&#x3c;x&#x3c;1) having bandgap energy equal to that of the material and a composition different thereto and the adjacent quantum barrier layer.

Nitride semiconductor light emitting device

Growing community of inventors

Troy, NY, United States of America

F Fred Schubert