Translucent, Inc.

F Erdem Arkun

Michael S Lebby

Andrew C Clark

Robin G Smith

Richard Andrew Sewell

Scott Semans

David Lothele Williams

The present invention relates to semiconductor devices comprising rare earth based optical gain medium layers suitable for electronic and optoelectronic applications.

Earth abundant photonic structures

Examples of device structures utilizing layers of rare earth oxides to perform the tasks of strain engineering in transitioning between semiconductor layers of different composition and/or lattice orientation and size are given. A structure comprising a plurality of semiconductor layers separated by transition layer(s) comprising two or more rare earth compounds operable as a sink for structural defects is disclosed.

Multijunction rare earth solar cell

The use of rare-earth (RE and O, N, P) based materials to transition between two different semiconductor materials and enable up and/or down conversion of incident radiation is disclosed. Rare earth based oxides, nitrides and phosphides provide a wide range of lattice spacing enabling, compressive, tensile or stress-free lattice matching with Group IV, III-V, and Group II-VI compounds.

Active rare earth tandem solar cell

The use of rare-earth (RE+O, N, P) based materials to transition between two semiconductor materials is disclosed. Rare earth based oxides, nitrides and phosphides provide a wide range of lattice spacings enabling, compressive, tensile or stress-free lattice matching with Group IV, III-V, and Group II-VI compounds. Disclosed embodiments include tandem solar cells.

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Palo Alto, CA, United States of America

F Erdem Arkun