Micron Technology Incorporated

Ezra E Hartz

Joseph A De La Cerda

Bruce J Ford

Benjamin Rivera

Nicolas Soberanes

Christopher Scott Moore

Vipul Patel

Jonathan Scott Parry

A host can determine whether to train an AI accelerator of a memory sub-system. Responsive to determining to train the AI accelerator, the host can determine a training category corresponding to a memory access request. The host can also provide an indication to the memory sub-system that causes training of the AI accelerator to be performed based on the training category.

Host training indication for memory artificial intelligence

Apparatuses and methods can be related to reducing memory device overhead using artificial intelligence (AI). Reducing overhead can include receiving file metadata of a data file and device metadata of the memory device. Based on the file metadata and the device metadata, a number of indicators can be selected to provide an indication of an expected use of the data file in the memory device. The number of indicators can be provided to the memory device. The data file can be stored with different data files having matching indicators corresponding thereto.

Memory device overhead reduction using artificial intelligence

A processing device coupled to the memory device can be configured to monitor respective raw bit error rates (RBERs) corresponding to a plurality of groups of memory cells of the memory device. The processing device can also be configured to responsive to determining that an RBER corresponding to a particular group of the plurality of groups of memory cells has met a criteria, adjust a read window budget corresponding to the particular group of memory cells.

Raw bit error rate based trim level adjustments for memory

Apparatuses and methods can be related to implementing adjustable data protection schemes using artificial intelligence. Implementing adjustable data protection schemes can include receiving failure data for the plurality of memory devices and receiving an indication of a failure of a stripe of the plurality of memory devices based on the failure data. Based on failure data, and the indication of the failure of the stripe of the plurality of memory devices, a data protection scheme adjustment can be generated for the memory device. The data protection scheme adjustment can be received from the AI accelerator and can be implemented by a plurality of memory devices.

Adjustable data protection scheme using artificial intelligence

A memory device includes an array of memory cells configured as single-level cell memory and control logic operatively coupled with the array of memory cells. The control logic is to perform operations including: causing first data to be programmed to a plurality of memory cells of the array of memory cells, the first data including a first erase distribution programmed below an erase threshold voltage (Vt) level and a first voltage distribution programmed relative to a first Vt level; and causing, without erasing the plurality of memory cells, second data to be programmed to the plurality of memory cells, the second data including a second erase distribution programmed relative to the first Vt level and a second voltage distribution programmed relative to a second Vt level.

Multi-program of memory cells without intervening erase operations

An apparatus can include an array of memory cells and control circuitry coupled to the array of memory cells. The control circuitry can be configured to store a number of trim settings and receive signaling indicative of a use of the array of memory cells. The control circuitry can be configured to determine an adjustment to the number of trim settings based at least in part on the signaling.

Adjustment to trim settings based on a use of a memory device

Methods, systems, and devices for reduced-voltage operation of a memory device are described. A memory device may operate in different operational modes based on a value of a supply voltage fir the memory device. For example, when the value of the supply voltage exceeds both a first threshold voltage and a second threshold voltage, the memory device may be operated in a normal operation mode. When the value of the supply voltage is between the first threshold voltage and the second threshold voltage, the memory device may be operated in a low voltage operation mode, which may be a reduced performance mode relative to the normal operation mode. When the value of the supply voltage is below the second threshold voltage, the memory device may be deactivated.

Reduced-voltage operation of a memory device

A method includes determining a quantity of refresh operations performed on a block of a memory device of a memory sub-system and determining a quantity of write operations and a quantity of read operations performed to the block. The method also includes determining the block is read dominant using the quantity of write operations and the quantity of read operations and determining whether the quantity of refresh operations has met a criteria. The method further includes, responsive to determining that the block is read dominant and that the quantity of refresh operations has met the criteria, modifying trim settings used to operate the block of the memory device.

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Meridian, ID, United States of America

Ezra E Hartz