Intel Corporation

Proteantecs Ltd.

Ibtel Corporation

Eyal Fayneh

Evelyn Landman

Shai Cohen

Guy Redler

Inbar Weintrob

Ernest Knoll

Yahel David

Ofir Degani

Yair Talker

Inbar Falkov

Elias Nassar

Rotem Banin

Efraim Rotem

Joseph Shor

Michael Zelikson

Samer Nassar

Shaked Rahamim

Alex Khazin

Gregory Sizikov

Johanna M Swan

Aleksandar Aleksov

Telesphor Kamgaing

Kristof Darmawikarta

Sri Ranga Sai Boyapati

Noam Familia

Sebastian Sievert

Vijay K Vuppaladadium

Ramkumar Krithivasan

Avigdor Saksonov

Miguel A Corvacho Hernandez

Earnest Knoll

Ishai Zeev Cohen

David Levy

Bryan K Casper

Elan Banin

Frank Patrick O'Mahony

Sivakumar Mudanai

Farag Fattouh

Haydar Kutuk

Wei-kai Shih

Ernest Knol

Alexander Burlak

Edi Shmueli

Faten Tanasra

Shai Tzroia

Samer Nasser

Generation of a clock signal in a semiconductor integrated circuit (IC) is controlled using a Noise Modulation Agent (NMA), configured to measure the clock signal and output a parameter indicative of an effective cycle time of the clock signal. An Adaptive Frequency Scaling (AFS) circuit selectively adjusts a frequency of the clock signal, based on the output of the NMA indicating a change in a power supply voltage of the semiconductor IC.

Adaptive frequency scaling based on clock cycle time measurement

Failure risk measurement in a semiconductor Integrated Circuit (IC) by generating a pulse of a preset time duration on an output path when a signal from a data path and/or control logic circuit of the semiconductor IC changes. The data paths and/or control logic circuits of the semiconductor IC have a common clock. The output paths may be combined to provide a combined output path and a signal on the combined output path may be delayed by a configurable time duration, providing a delayed combined output path signal thereby. The delayed combined output path signal may be received at a data input of a device state element, which is clocked by a signal based on the common clock and outputs a failure risk measurement signal.

Integrated circuit margin measurement

A computerized method for IC classification, outlier detection and/or anomaly detection comprising using at least one hardware processor for testing each of the plurality of ICs in accordance with an IC design on a wafer, wherein the IC design comprises a plurality of sensors. The at least one hardware processor is used for testing each of the plurality of ICs by: collecting a plurality of sensor values, the plurality of sensor values including sensor values from each of the plurality of sensors; comparing the plurality of sensor values to a classification scheme, thereby obtaining a classification for each tested IC; and recording the classification of the tested IC.

Integrated circuit profiling and anomaly detection

A semiconductor integrated circuit (IC) comprising a time-to-digital converter (TDC) configured to measure an input-to-output delay of an I/O buffer of a pad the IC, the measured delay reflecting a connection impedance of the pad. A circuit in the IC, or a computer in communication with the IC, determines electrical connection integrity of the pad based on the measured delay of the I/O buffer.

Integrated circuit pad failure detection

Structural testing of a semiconductor integrated circuit (IC), including scanning test patterns or test conditions into internal circuits of the semiconductor IC, for example from a tester device. A timing margin may be measured during the structural test. The margin is measured based on a characteristic of a comparison between a test signal path of the semiconductor IC and a delayed signal path, the delayed signal path being a signal of the test signal path delayed by a variable delay time. An output of the margin measurement sensor may be scanned out, for instance to the tester device.

Integrated circuit margin measurement for structural testing

A method comprising using at least one hardware processor for: running a Monte Carlo simulation of possible integrated circuit (IC) process variations of each of a plurality of IC cell types, wherein each of the plurality of IC cell types is defined by multiple specific transistors and multiple specific interconnects; based on the results of the Monte Carlo simulation, creating a library of IC cell types and their corresponding behavioral values for each of the possible IC process variations, and storing the library in a non-transient memory; receiving an IC design embodied as a digital file; correlating the received IC design with the library; and predicting a frequency distribution and a power distribution of ICs manufactured according to the IC design.

Efficient integrated circuit simulation and testing

Loopback testing may be provided for one or more transmission output paths of a semiconductor Integrated Circuit (IC). One or more parametric loopback sensors are provided in the semiconductor IC, each parametric loopback sensor being configured to receive a clocked data input signal to a respective transmitter of the IC and a signal from a transmission output path from the respective transmitter of the IC, and to generate a respective sensor output based on a comparison of the clocked data input signal and the signal from the transmission output path for the respective transmitter of the IC. A programmable load circuit is also provided in the semiconductor IC, coupled to each transmission output path.

Loopback testing of integrated circuits

An integrated circuit (IC) comprising: a margin measurement circuit configured to monitor multiple data paths of the IC and to output, at different times, different ranges of remaining margins of the multiple data paths; a workload sensor configured to output a value representing aggregate operational stress experienced by the IC over a period of time ending at each of the different times; and a processor configured to: (i) compute, based on the value output by said workload sensor, an upper bound and a lower bound of change of the remaining margin of the IC, and (ii) compute upper and lower bounds of a current remaining margin of the IC, based on (a) the upper and lower bounds of change, and (b) a remaining margin indicated by a border between two adjacent ranges outputted by the margin measurement circuit.

Integrated circuit workload, temperature, and/or sub-threshold leakage sensor

An input/output (I/O) sensor for a multi-IC module. The I/O sensor includes: delay circuitry, configured to receive a data signal from an interconnected part of an IC of the multi-IC module and to generate a delayed data signal, the delay circuitry including an adjustable delay-line configured to delay an input signal by a set time duration; a comparison circuit, configured to generate a comparison signal by comparing the data signal with the delayed data signal; and processing logic, configured to set the time duration of the adjustable delay-line and, based on the comparison signal, identify a margin measurement of the data signal for determining an interconnect quality parameter.

Die-to-die connectivity monitoring

An input/output (I/O) sensor is provided for a multi-IC (Integrated Circuit) module. The I/O sensor includes: a signal input, configured to receive a data signal from an interconnected part of an IC of the multi-IC module; and a time duration measurement circuit, configured to measure a time duration between a first time, at which the data signal is at a first level, and a second time, at which the data signal is at a second level, different from the first level. The sensor may be incorporated into an I/O block, an IC, and/or a multi-IC module.

Die-to-die and chip-to-chip connectivity monitoring

A memory circuit which includes: A synchronous memory cell array, configured to receive a clock signal and having address lines and bit lines. A margin agent, determining a status of the synchronous memory cell array based on a time duration between a transition of the clock signal and a change on a signal derived from a bit line due to a signaling on at least one of the address lines. In another aspect, a memory cell, having a bit line configured to provide data input/output to the memory cell may be provided with a comparator, comparing a voltage on the bit line with a reference voltage and indicating of a status of the memory cell thereby. Firmware may receive the indication of the status of a memory cell array, and transmit the indication, issue an alert, and/or reconfigure the memory circuit responsive to the status.

Memory device degradation monitoring

In-package radio frequency (RF) waveguides as high bandwidth chip-to-chip interconnects and methods for using the same are disclosed. In one example, an electronic package includes a package substrate, first and second silicon dies or tiles, and an RF waveguide. The first and second silicon dies or tiles are attached to the package substrate. The RF waveguide is formed in the package substrate and interconnects the first silicon die or tile with the second silicon die or tile.

In-package RF waveguides as high bandwidth chip-to-chip interconnects and methods for using the same

A semiconductor integrated circuit (IC) comprising a signal path combiner, comprising a plurality of input paths and an output path. The IC comprises a delay circuit having an input electrically connected to the output path, the delay circuit delaying an input signal by a variable delay time to output a delayed signal path. The IC may comprise a first storage circuit electrically connected to the output path and a second storage circuit electrically connected to the delayed signal path. The IC comprises a comparison circuit that compares outputs of the signal path combiner and the delayed signal, wherein the comparison circuit comprises a comparison output provided in a comparison data signal to at least one mitigation circuit.

Integrated circuit margin measurement and failure prediction device

An I/O sensor including: a programmable delay line; a delayed clocked receiver having the following inputs: (a) a data signal and a reference voltage that also serve as inputs to a reference clocked receiver that is configured to sample the data signal received from an interconnect lane between two integrated circuits (ICs) of a multi-IC module, and (b) a delayed clock signal received from the programmable delay line, wherein the delayed clock signal is a delayed version of a clock signal that clocks the reference clocked receiver; a comparison circuits configured to compare a data signal output of the delayed clocked receiver and a data signal output of the reference clocked receiver; and a controller configured, based on a comparison result of the comparison circuit and on the amount of delay that caused it, to estimate a quality of connectivity between the two ICs over the interconnect lane.

Die-to-die connectivity monitoring using a clocked receiver

An input/output (I/O) block for a semiconductor integrated circuit (IC), which includes: at least one I/O buffer, configured to define at least one signal path in respect of a connection to a remote I/O block via a communication channel, each signal path causing a respective signal edge slope; and an I/O sensor, coupled to the at least one signal path and configured to generate an output signal indicative of one or both of: (a) a timing difference between the signal edge for a first signal path and the signal edge for a second signal path, and (b) an eye pattern parameter for one or more of the at least one signal path.

Integrated circuit I/O integrity and degradation monitoring

Growing community of inventors

Givatayim, Israel

Eyal Fayneh