Solar Junction Corporation

Tectus Corporation

Ewelina Natalia Lucow

Kwong-Hin Henry Choy

Paul Scott Martin

Michael West Wiemer

Onur Fidaner

Lan Zhang

Ferran Suarez

Vijit A Sabnis

Sathya Chary

Sabeur Siala

Ali Torabi

In one aspect, the LEDs in an LED array include a semiconductor mesa and a ruthenium reflector positioned above the top surface of the semiconductor mesa. Working downwards from the ruthenium reflector, the mesa includes a top p-layer, an active region such as a quantum well region, and a bottom n-layer. The n- and p-layers may be reversed, so that the top layer is an n-layer and the bottom layer is a p-layer. The semiconductor layers have a mesa shape, with a smaller top surface and the ruthenium reflector above that. The sidewalls of the mesa extend downwards and outwards from the top surface.

Ultra-dense array of LEDs with ruthenium mirrors

In one approach, an LED array uses a combination of a half cavity and straight reflective sidewalls to improve the power distribution so that more light falls within the collection angle of the projection optics. From the bottom upwards, the LEDs in the array include a reflector, a thinner p-layer and a thicker n-layer. An active region (such as quantum wells) between the p-layer and the p-layer generates light. Without additional structures, the generated light would have an isotropic distribution and not much of the light would fall within the collection angle of the projection optics. However, the bottom reflector and p-layer form a half cavity for the light emitted from the active region. This alters the angular power distribution. Straight reflective sidewalls extending from the active region upwards into the n-layer further reflect light from the altered power distribution into the collection angle of the projection optics.

Ultra-dense array of LEDs with half cavities and reflective sidewalls, and hybrid bonding methods

Ultra-dense array of LEDs with half cavities and reflective sidewalls, and manufacturing methods

Ultra-dense array of LEDs with half cavities and reflective sidewalls

This disclosure relates to semiconductor devices and methods for fabricating semiconductor devices. Particularly, the disclosure relates to back-contact-only multijunction solar cells and the process flows for making such solar cells, including a wet etch process that removes semiconductor materials non-selectively without major differences in etch rates between heteroepitaxial III-V semiconductor layers.

Via etch method for back contact multijunction solar cells

Photovoltaic cells, methods for fabricating surface mount multijunction photovoltaic cells, methods for assembling solar panels, and solar panels comprising photovoltaic cells are disclosed. The surface mount multijunction photovoltaic cells include through-wafer-vias for interconnecting the front surface epitaxial layer to a contact pad on the back surface. The through-wafer-vias are formed using a wet etch process that removes semiconductor materials non-selectively without major differences in etch rates between heteroepitaxial III-V semiconductor layers.

Surface mount solar cell with integrated coverglass

A single-step wet etch process is provided to isolate multijunction solar cells on semiconductor substrates, wherein the wet etch chemistry removes semiconductor materials nonselectively without a major difference in etch rate between different heteroepitaxial layers. The solar cells thus formed comprise multiple heterogeneous semiconductor layers epitaxially grown on the semiconductor substrate.

Method for etching multi-layer epitaxial material

A semiconductor light detection device fabrication technique is provided in which the cap etch and anti-reflection coating steps are performed in a single, self-aligned lithography module.

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Los Gatos, CA, United States of America

Ewelina Natalia Lucow