Ams Ag

Austriamicrosystems Ag

Ams International Ag

Ams-osram Ag

Ewald Wachmann

Gerald Meinhardt

Martin Schrems

Jens Hofrichter

Jochen Kraft

Georg Röhrer

Rainer Minixhofer

Hubert Enichlmair

Jordi Teva

Bernhard Löffler

Frederic Roger

Günther Koppitsch

Stefan Jessenig

Ewald Stueckler

Guenther Koppitsch

Martin Sagmeister

Ewald Stückler

The present disclosure relates to a photodiode device, which overcomes the drawbacks of conventional devices like increased dark currents. The photodiode device includes a semiconductor substrate, at least one doped well of a first type of electric conductivity at a main surface of the substrate and at least one doped region of a second type of electric conductivity being adjacent to the doped well. The at least one doped well and the at least one doped region are electrically contactable. On a portion of an upper surface of the doped well a protection structure is arranged. The protection structure protects the upper surface of the underlying doped well from an etching process for removing a spacer layer.

Photodiode device with improved dark current

The photodiode device comprises a substrate () of semiconductor material with a main surface (), a plurality of doped wells () of a first type of conductivity, which are spaced apart at the main surface (), and a guard ring () comprising a doped region of a second type of conductivity, which is opposite to the first type of conductivity. The guard ring () surrounds an area of the main surface () including the plurality of doped wells () without dividing this area. Conductor tracks () are electrically connected with the doped wells (), which are thus interconnected, and further conductor tracks () are electrically connected with a region of the second type of conductivity. A doped surface region () of the second type of conductivity is present at the main surface () and covers the entire area between the guard ring () and the doped wells ().

Radiation-hard high-speed photodiode device

The lateral single-photon avalanche diode comprises a semiconductor body comprising a semiconductor material of a first type of electric conductivity, a trench in the semiconductor body, and anode and cathode terminals. A junction region of the first type of electric conductivity is located near the sidewall of the trench, and the electric conductivity is higher in the junction region than at a farther distance from the sidewall. A semiconductor layer of an opposite second type of electric conductivity is arranged at the sidewall of the trench adjacent to the junction region. The anode and cathode terminals are electrically connected with the semiconductor layer and with the junction region, respectively. The junction region may be formed by a sidewall implantation.

Lateral single-photon avalanche diode and method of producing a lateral single-photon avalanche diode

A light-sensitive component which has a semiconductor junction between a thin relatively highly doped epitaxial layer and a relatively lightly doped semiconductor substrate. Outside a light incidence window, an insulating layer is arranged between epitaxial layer and semiconductor substrate. In this case, the thickness of the epitaxial layer is less than 50 nm, with the result that a large proportion of the light quanta incident in the light incidence window can be absorbed in the lightly doped semiconductor substrate.

Light-sensitive component with increased blue sensitivity, method for the production thereof, and operating method

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Kainbach, Austria

Ewald Wachmann