Ams Ag

Austriamicrosystems Ag

Ewald Stückler

Martin Schrems

Jochen Kraft

Rainer Minixhofer

Jordi Teva

Jörg Siegert

Frederic Roger

Günther Koppitsch

Ewald Wachmann

Stefan Jessenig

Karl Rohracher

A cutout (), which penetrates the semiconductor body, is present in the semiconductor body (). A conductor layer (), which is electrically conductively connected to a metal plane () on or over the semiconductor body, screens the semiconductor body electrically from the cutout. The conductor layer can be metal, optionally with a barrier layer (), or a doped region of the semiconductor body.

Method for producing a semiconductor device comprising a conductor layer in the semiconductor body and semiconductor body

A silicon substrate includes plural partial areas defined on the silicon substrate such that adjacent partial areas are orientated in different directions. The plural partial areas define an insulating layer that extends from a surface of the silicon subtrate into the silicon substrate. Each of the plural partial areas includes first regions that contain silicon dioxide formed by oxidation of silicon in the silicon substrate, and second regions that contain silicon dioxide deposited onto the silicon substrate. The first regions and the second regions are oriented in a substantially same direction and are arranged side-by-side and alternately such that two first regions do not border and two second regions do not border.

Silicon substrate having an insulating layer

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Unterpremstätten, Austria

Ewald Stückler