Ams Ag

Ewald Stueckler

Jordi Teva

Guenther Koppitsch

Martin Schrems

Jochen Kraft

Rainer Minixhofer

Joerg Siegert

Frederic Roger

Karl Rohracher

Ewald Wachmann

Stefan Jessenig

The lateral single-photon avalanche diode comprises a semiconductor body comprising a semiconductor material of a first type of electric conductivity, a trench in the semiconductor body, and anode and cathode terminals. A junction region of the first type of electric conductivity is located near the sidewall of the trench, and the electric conductivity is higher in the junction region than at a farther distance from the sidewall. A semiconductor layer of an opposite second type of electric conductivity is arranged at the sidewall of the trench adjacent to the junction region. The anode and cathode terminals are electrically connected with the semiconductor layer and with the junction region, respectively. The junction region may be formed by a sidewall implantation.

Lateral single-photon avalanche diode and method of producing a lateral single-photon avalanche diode

The semiconductor device comprises a substrate () of semiconductor material, a dielectric layer () above the substrate, a waveguide () arranged in the dielectric layer, and a mirror region () arranged on a surface of a mirror support () integrated on the substrate. A mirror is thus formed facing the waveguide. The surface of the mirror support and hence the mirror are inclined with respect to the waveguide.

Semiconductor device with integrated mirror and method of producing a semiconductor device with integrated mirror

The method comprises the steps of providing a semiconductor body or substrate () with a recess or trench () in a main surface (), applying a mask () on the main surface, the mask covering the recess or trench, so that the walls and bottom of the recess or trench and the mask together enclose a cavity (), which is filled with a gas, and forming at least one opening () in the mask at a distance from the recess or trench, the distance () being adapted to allow the gas to escape from the cavity via the opening when the gas pressure exceeds an external pressure.

Masking method for semiconductor devices with high surface topography

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Unterpremstaetten, Austria

Ewald Stueckler