X-Fab Semiconductor Foundries Ag

Evie Siaw Hei Kho

Tsui Ping Chu

Peng Yang

Swee Hua Tia

Yong Kheng Ang

A semiconductor device comprising a semiconductor substrate and a composite capacitor structure on the semiconductor substrate, wherein the composite capacitor structure comprises a capacitor stack comprising a lower and an upper capacitor, respectively comprising first and second dielectric materials, wherein the first and second dielectric materials are different materials and/or have different thicknesses from each other. This can minimize the voltage dependence of the capacitance of the composite capacitor structure. It is also possible to provide a composite capacitor structure on the semiconductor substrate, wherein the composite capacitor structure comprises at least a first and a second capacitor stack, each comprising a lower and an upper capacitor. The capacitors can be MIM capacitors.

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Kuching, Malaysia

Evie Siaw Hei Kho