Ii-Vi Delaware, Inc.

Oclaro Technology Limited

Ii-Vi Laser Enterprise Gmbh

Evgeny Zibik

Susanne Pawlik

René Todt

Gustavo F Villares

Boris Sverdlov

Stefan Mohrdiek

Markus Rösch

Antoine Philippe Pissis

Wilfried Maineult

Hans Ulrich Pfeiffer

Stefano Tirelli

A vertical cavity surface emitting laser (VCSEL) device comprising a VCSEL emitter having a waveguide with a guided portion and an antiguided portion is disclosed. The guided and antiguided portions may select and confine a mode of the VCSEL emitter. The antiguided portion may also be used to coherently couple adjacent VCSEL emitters.

Vertical cavity surface emitting laser (VCSEL) emitter with guided-antiguided waveguide

A laser device with one or more active regions, such as quantum wells, gain/lighting media, or other devices, and one or more non-absorbing regions, may be formed by a first growth run (growing a first semiconductor layer), then performing selective, shallow-depth etching, and then a second growth run (growing a second semiconductor layer). The laser device may include a first portion, one or more active regions located on the first portion, and a second portion located on the active region(s). A third portion may be located on one or more ends of the first portion and on the second portion. The third portion may be formed during the second growth run, after the etching step. The non-absorbing region(s) may be formed by the third portion and the end(s) of the first portion. If desired, the non-absorbing region(s) may be produced without annealing or locally-induced quantum well intermixing.

Laser device with non-absorbing mirror, and method

A semiconductor laser is formed to include a current blocking layer that is positioned below the active region of the device and used to minimize current spreading beyond the defined dimensions of an output beam's optical mode. When used in conjunction with other current-confining structures typically disposed above the active region (e.g., ridge waveguide, electrical isolation, oxide aperture), the inclusion of the lower current blocking layer improves the efficiency of the device. The current blocking layer may be used in edge-emitting devices or vertical cavity surface-emitting devices, and also functions to improve mode shaping and reduction of facet deterioration by directing current flow away from the facets.

Control of current spread in semiconductor laser devices

A vertical cavity surface emitting laser (VCSEL) array is fabricated to produce multiple wavelengths. A first distributed Bragg reflector (DBR) is formed on a substrate, and an optical layer having an active region is formed on the first DBR. The optical layer has a variation in optical characteristic configured to generate multiple wavelengths. To do this, a first portion of the layer is formed on the first DBR. Different dimensioned features (profiles, wells, trenches, gratings, etc.) are then formed on a surface of the first portion. Subsequently, a second portion of the layer is formed by filling in the dimensioned features on the first portion's surface. Finally, a second DBR is formed on the second portion of the layer. The variation in optical characteristic can include variation in refractive index, physical thickness, or both. The assembly can be processed as usual to produce a VCSEL array having multiple emitters.

Multi-wavelength VCSEL array and method of fabrication

A laser device having a semiconductor gain element optically coupled to an optical fiber by using an angled anamorphic fiber lens and including a wavelength-selective front reflector. The laser device possesses improved output characteristics such as a highly linear laser emission output, even when the amplification section produces a high amount of gain. Such a laser source can also be used in various applications such as pump lasers for fiber amplifiers or frequency doubling systems.

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Zurich, Switzerland

Evgeny Zibik