Micron Technology Incorporated

Everardo Torres Flores

Hernan Adolfo Castro

Jeremy Miles Hirst

Stephen H S Tang

Fabio Pellizzer

Row electrode drivers and column electrode drivers for a memory device are distributed within a footprint share by a memory cell array.

Memory device architecture

Row and/or column electrode lines for a memory device are staggered such that gaps are formed between terminated lines. Vertical interconnection to central points along adjacent lines that are not terminated are made in the gap, and vertical interconnection through can additionally be made through the gap without contacting the lines of that level.

Interconnection for memory electrodes

Subject matter disclosed herein may relate to word line electrodes and/or digit line electrodes in a cross-point array memory device. One or more word line electrodes may be configured to form a socket area to provide connection points to drivers and/or other circuitry that may be located within a footprint of an array of memory cells.

Connections for memory electrode lines

For multi-level interconnect metallization, each metal level maintains a parallel line arrangement within a region, and the lines of each adjacent metal level are orthogonal or otherwise cross with one another. Vertical shunting among levels for routing in different directions employs short paddles that stay within the parallel scheme, and multiple paddles within a region at the same metal level can be co-linear. Parallel lines in the same metal level can be rotated with respect to one another in adjacent regions, for example to better interface with driver circuitry with orthogonal orientations in the different regions.

Growing community of inventors

Folsom, CA, United States of America

Everardo Torres Flores