Applied Materials, Inc.

Evelyn Scheer

Marcus Bender

Udo Schreiber

Markus Hanika

Fabio Pieralisi

Andreas Klöppel

Guido Mahnke

Oliver Graw

Roland Weber

A method of producing a semiconductor device is provided, the semiconductor device including a substrate, a semiconductor layer and at least one metallization layer adjacent to at least one element chosen from the substrate and the semiconductor layer, the method including forming at least one metallization layer which, adjacent to at least one element chosen from the substrate and the semiconductor layer, includes oxygen.

Method and installation for producing a semiconductor device, and semiconductor device

A method for forming a thin-film transistor gate insulating layer over a substrate disposed in a processing chamber is provided. The method includes: introducing a processing gas for producing a plasma in the processing chamber; heating the substrate to a substrate processing temperature of between 50 and 350&#xb0; C.; and depositing silicon oxide, silicon oxynitride, or silicon nitride over the heated substrate by sputtering a target assembly at a medium frequency.

Method and system for depositing a thin-film transistor

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Stockstadt, Germany

Evelyn Scheer