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Evan Heller

Faquir Chand Jain

Pawan Gogna

John Chandy

Multi-source/drain Spatial Wavefunction Switched (SWS) field-effect transistors (FETs) are configured to serve as 1-bit and 2-bit static random access memory (SRAM) and dynamic random access memory (DRAM) cells. The SWS-FET transport channel comprises of multiple asymmetric coupled wells which are contacted via more than one sources and drains.

Random access memory cells using spatial wavefunction switched field-effect transistors

A field-effect transistor is provided and includes source, gate and drain regions, where the gate region controls charge carrier location in the transport channel, the transport channel includes a asymmetric coupled quantum well layer, the asymmetric quantum well layer includes at least two quantum wells separated by a barrier layer having a greater energy gap than the wells, the transport channel is connected to the source region at one end, and the drain regions at the other, the drain regions include at least two contacts electrically isolated from each other, the contacts are connected to at least one quantum well. The drain may include two regions that are configured to form the asymmetric coupled well transport channel. In an embodiment, two sources and two drains are also envisioned.

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Glastonbury, CT, United States of America

Evan Heller