Georgia Tech Research Corporation

Evan A Clinton

William Alan Doolittle

Brendan Patrick Gunning

Chloe A M Fabien

Joseph J Merola

Systems and methods for the rapid growth of Group III metal nitrides using plasma assisted molecular beam epitaxy. The disclosure includes higher pressure and flow rates of nitrogen in the plasma, and the application of mixtures of nitrogen and an inert gas. Growth rates exceeding 8 &#x3bc;m/hour can be achieved.

System and method for increasing group III-nitride semiconductor growth rate and reducing damaging ion flux

Systems and methods are disclosed for rapid growth of Group III metal nitrides using plasma assisted molecular beam epitaxy. The disclosure includes higher pressure and flow rates of nitrogen in the plasma, and the application of mixtures of nitrogen and an inert gas. Growth rates exceeding 8 &#x3bc;m/hour can be achieved.

Growing community of inventors

Atlanta, GA, United States of America

Evan A Clinton