International Business Machines Corporation

Globalfoundries Inc.

Eva A Shah

Graham M Bates

Eric Jeffrey White

Matthew T Tiersch

Thomas L McDevitt

Michael T Brigham

Jason P Ritter

Joseph K Comeau

Jeffrey P Gambino

Jed Hickory Rankin

Zhong-Xiang He

Edward Crandal Cooney, Iii

Thomas J Dunbar

Yoba Amoah

Yen L Lim

Joseph P Hasselbach

Darshana N Bhagat

Gregory S Chrisman

Thomas Leddy Mcdevitt

Matthew Thomas Tiersch

Graham Matthew Bates

A composition and a method for chemical mechanical polishing. The composition includes a surfactant anion an alkyl alcohol and a diluent. The composition further includes abrasive particles and an oxidizer. The method includes providing the composition on a surface to be polished and polishing the surface by contacting the surface with a polishing pad.

Slurry for chemical-mechanical polishing of metals and use thereof

a method comprises forming a hardmask over one or more gate structures. The method further comprises forming a photoresist over the hardmask. The method further comprises forming an opening in the photoresist over at least one of the gate structures. The method further comprises stripping the hardmask that is exposed in the opening and which is over the at least one of the gate structures. The method further comprises removing the photoresist. The method further comprises providing a halo implant on a side of the at least one of the gate structures.

Semiconductor devices with asymmetric halo implantation and method of manufacture

A composition and a method for chemical mechanical polishing. The composition includes a surfactant anion an alkyl alcohol, a controlled amount of chloride ion source and a diluent. The composition further includes abrasive particles and an oxidizer. The method includes providing the composition on a surface to be polished and polishing the surface by contacting the surface with a polishing pad.

Slurry for chemical-mechanical polishing of copper and use thereof

A method of manufacturing a semiconductor structure includes varying local chemical mechanical polishing (CMP) abrading rates of an insulator film by selectively varying a carbon content of the insulator film.

Locally tailoring chemical mechanical polishing (CMP) polish rate for dielectrics

A structure and method for fabricating the structure that provides a metal wire having a first height at an upper surface. An insulating material surrounding said metal wire is etched to a second height below said first height of said upper surface. The metal wire from said upper surface, after etching said insulating material, is planarized to remove sufficient material from a lateral edge portion of said metal wire such that a height of said lateral edge portion is equivalent to said second height of said insulating material surrounding said metal wire.

Top corner rounding of damascene wire for insulator crack suppression

The instant invention is a method of polishing a substrate including contacting a substrate having at least one metal layer including copper with a chemical-mechanical polishing composition. The CMP composition includes an abrasive, a surfactant, an oxidizer, an organic acid including polyacrylic acid or polymethacrylic acid, a corrosion inhibitor, and a liquid carrier. A portion of the copper in the metal layer is abraded to polish the substrate. A second CMP composition contacts the abraded substrate, the second acrylate free composition including an abrasive, a surfactant, an oxidizer, and a corrosion inhibitor, and a liquid carrier. Any dendrites that may have formed on the substrate are removed through abrasion.

CMP method

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Essex Junction, VT, United States of America

Eva A Shah