Samsung Electronics Co., Ltd.

Lg Electronics Inc.

Other

Skhynix Inc.

Yonsei University

Kyungpook National University Industry-Academic Cooperation Foundation

Eunsung Lee

Junhee Choi

Kiho Kong

Junghun Park

Joohun Han

Jinjoo Park

Nakhyun Kim

Dongho Kim

Jong Keun Song

Youngil Kim

Joungeun Yoo

Duseop Yoon

Minseog Choi

Chanyong Park

Changhoon Shin

Dong Kyung Nam

Jinho Lee

Jinwan An

Yoonsun Choi

Byong Min Kang

Younghwan Park

Kyuhwan Choi

Hakryoul Kim

Dongchul Shin

Joosung Kim

Baehyung Kim

Kyungil Cho

Yongrae Roh

Dohyang Kim

Yunsuk Kang

Hejin Cheong

In electronic devices according to various embodiments, after a partition in which one or more applications are installed is reset by a factory data reset function, the one or more applications installed in the partition can be installed on the basis of a backup file. When the factory data reset function is not requested by a user who has purchased an electronic device, for example, when an inspector of the electronic device requests the factory data reset function or the factory data reset function is requested on the basis of the SIM card that was first inserted into the electronic device, the restoration of the one or more applications using the backup file can be performed by the electronic device.

Device and method for restoring application removed by factory data reset function

A display device includes an ion implantation region, a first semiconductor layer, an active layer under the first semiconductor layer, and a second semiconductor layer under the active layer. The ion implantation region includes a plurality of ions and partitions the active layer into a plurality of light-emitting regions, and an average ion concentration ratio of each of the light-emitting regions is 2 to 15.

Light-emitting diode display device and manufacturing method thereof

Provided is a substrate structure including a substrate, a buffer layer disposed on the substrate, a porous semiconductor layer disposed on the buffer layer, the porous semiconductor layer having a plurality of voids, a plurality of semiconductor light emitting structures disposed on the porous semiconductor layer, the plurality of semiconductor light emitting structures having a nanorod shape extending vertically, and a passivation film disposed on a side wall of each of the plurality of semiconductor light emitting structures, the passivation film having an insulation property.

Nanorod light emitting device, substrate structure including a plurality of nanorod light emitting devices, and method of manufacturing the substrate structure

A micro light-emitting display apparatus and a method of manufacturing the same are disclosed The micro light-emitting display apparatus includes a first semiconductor layer, an isolation structure provided on the first semiconductor layer and configured to define a plurality of sub-pixels each configured to emit light, a first light-emitting unit including a first active layer provided in a first sub-pixel among the plurality of sub-pixels, and a second semiconductor layer provided on the first active layer, and a second light-emitting unit including a rod semiconductor layer provided in a second sub-pixel among the plurality of sub-pixels, a second active layer provided on the rod semiconductor layer, and a third semiconductor layer provided on the second active layer. The first active layer is configured to emit blue light and the second active layer is configured to emit green light.

Micro light-emitting display apparatus and method of manufacturing the same

A method and a device are provided. The device includes a first memory, a second memory having a storage characteristic different from that of the first memory, and a processor operatively connected to at least one of the first memory and the second memory. The processor is configured to generate a logical storage area in a data area of the first memory, store designated data in the generated logical storage area, and enter a recovery mode to store the data stored in the logical storage area in the second memory, format the first memory, and move the data stored in the second memory to the data area of the first memory.

Method for preserving data in electronic device initialization situation and electronic device therefor

The present disclosure relates to a camera device. The camera device and an electronic device including the same according to an embodiment of the present disclosure include: a color camera; an IR camera; and a processor configured to extract a first region of a color image from the color camera, to extract a second region of an IR image from the IR camera, to calculate error information based on a difference between a gradient of the first region and a gradient of the second region, to compensate for at least one of the color image and the IR image based on the calculated error information, and to output a compensated color image or a compensated IR image.

Camera device and electronic device including the same

A semiconductor device includes: a substrate; a test transistor over the substrate; and multi-level metal interconnections formed over the substrate spaced apart from the test transistor, wherein at least one metal interconnection among the multi-level metal interconnections is a spiral metal interconnection.

Semiconductor device with metal interconnection

A quasicrystalline material and a semiconductor device to which the quasicrystalline material is applied are disclosed. A quasicrystalline material is based on a quasicrystalline element having one or more axis of symmetry (e.g., a 2-fold axis, a 3-fold axis, a 5-fold axis, or a higher fold axes of symmetry). The quasicrystalline material is capable of phase changes between a quasicrystalline phase and an approximant crystalline phase having a further regular atom arrangement than the quasicrystalline phase. The quasicrystalline material that may be used as a phase change material and may be applied to a phase change layer of a semiconductor device.

Quasicrystalline material and semiconductor device applying the same

Provided are a titanium-based amorphous alloy and a phase-change memory device in which the titanium-based amorphous alloy is applied to a phase-change layer. The titanium-based amorphous alloy may include titanium, antimony, and at least one metallic component. The titanium-based amorphous alloy may be configured as a phase-change material having a reversible phase change between a titanium-based amorphous alloy phase and at least one crystalline phase.

Ti-based amorphous alloy and phase change memory device applying the same

Provided is a video correction method comprising: extracting a common feature point from a number of video frames corresponding to a correction window size; extracting a trace of the feature point from the video frames; calculating an average value of the trace in the video frames; extracting a stabilized trace from a circular queue circular queue buffer using the trace and the average value; and applying a repositioning operation and a perspective warping operation to the video frames based on the stabilized trace to generate a stabilized video.

Video correction method and device to generate stabilized video

A brassiere includes: first and second connecting bands extending from cups to the left and right; a plurality of hooks provided on an end portion of the first connecting band; a plurality of stopping loops provided on an end portion of the second connecting band in multiple columns, the plurality of hooks being engaged with, or disengaged from, the plurality of loops; and a resilient band provided between the first and second connecting bands, wherein the end portion of the second connecting band includes: a stationary band portion on which, among the plurality of stopping loops, stationary stopping loops, the positions of which are fixed, are arranged; and a mobile band portion on which, among the plurality of stopping loops, mobile stopping loops, the positions of which are movable, are arranged, wherein the mobile band portion can resiliently move toward or away from the stationary band portion.

Brassiere

An optical layer may include a barrier. The barrier may include slits arranged in the barrier so that vertically neighboring slits from among the slits are connected to each other. The slits are configured to transmit light through the barrier.

Optical layer, display device including the same and backlight unit

Disclosed herein is an ultrasound probe including a transducer array configured to generate ultrasonic waves, an integrated circuit disposed on a back surface of the transducer array by using an adhesive member, a printed circuit board connected to the integrated circuit and configured to output a signal to the integrated circuit, and a pad bridge disposed on front surfaces of the printed circuit board and the integrated circuit by using the adhesive member and configured to electrically connect the printed circuit board with the integrated circuit. An area of a region of the ultrasound probe contacting the human body may be reduced without reducing the size of the transducer array, and the integrated circuit and the printed circuit board may be integrally connected by using the adhesive member.

Ultrasound probe and manufacturing method thereof

An ultrasonic probe includes a capacitive micromachined ultrasonic transducer (cMUT) array configured to generate ultrasonic waves, an integrated circuit to which the cMUT array is bonded, and a flexible printed circuit board having one end connected to the integrated circuit to output signals to the integrated circuit, the integrated circuit including pads provided on the integrated circuit and an anisotropic conductive film (ACF) provided on the pads, and the one end of the flexible printed circuit board being connected to the ACF to thereby connect the flexible printed circuit board to the integrated circuit.

Growing community of inventors

Seoul, South Korea

Eunsung Lee