Lg Chem, Ltd

Samsung Electronics Co., Ltd.

Sungkyunkwan University

Eunsu Jang

Ye Hoon Im

Sangmin Park

Yoo Seok Kim

Jeong Kyu Kim

JinHyoung Yoo

JungWoo Lee

Jun Won Choi

Jung Woo Lee

Changsun Yun

Dongoh Kang

Jaesung Kim

Teaho Lee

Byoungkuk Lee

YooSeok Kim

JeongKyu Kim

Jin Hyoung Yoo

Hyomin Ahn

A method for manufacturing polysilicon, according to the present invention, is capable of manufacturing polysilicon with high purity more efficiently in such a manner that a high-temperature and high-speed air stream is formed at the center of a reaction tube, and a high-temperature region may be formed by a vortex formed by the high-temperature and high-speed air stream, so that a raw gas supplied from the side wall of the reaction tube flows by the guiding of the vortex, thereby increasing a stay time and a reaction time of the raw gas within the reaction tube. Furthermore, since the inner wall of the reaction tube is provided with a heat release means, the rapid cooling of a silicon crystal deposited on the inner wall of the reaction tube can induce a columnar crystal in which the silicon crystal is solidified in a direction perpendicular to a crystal face, and it is easy to desorb the silicon crystal produced by rapid heat release via the inner wall of the reaction tube.

Ultra-high temperature precipitation process for manufacturing polysilicon

According to the present invention, there is provided a polysilicon production apparatus including: a horizontal reaction tube having an inlet port through which gaseous raw materials including reactant gases and a reducing gas are supplied, an outlet port through which residual gases exit, a reaction surface with which the gaseous raw materials come into contact, and bottom openings through which molten polysilicon produced by the reactions of the gaseous raw materials is discharged; and first heating means adapted to heat the reaction surface of the horizontal reaction tube. The horizontal reaction tube includes reaction regions consisting of first reaction regions where polysilicon is deposited and second reaction regions where reaction by-products are converted to the reactant gases. The first reaction regions are connected in series with the second reaction regions. Also provided is a polysilicon production method using the polysilicon production apparatus.

Poly-silicon manufacturing apparatus and method using high-efficiency hybrid horizontal reactor

The present invention relates to an apparatus for producing trichlorosilane from tetrachlorosilane in an efficient manner. The apparatus includes an inlet through which reaction raw materials including a metal silicon powder dispersed in liquid tetrachlorosilane enter, a hole through which a gaseous reaction raw material is fed, an outlet through which reaction products including trichlorosilane exit, a tubular reactor in which the reaction raw materials entering through the inlet react with each other during flow, and means for impeding the flow of the fluids to cause collision of the fluids during flow.

Method for producing chlorosilane gas using continuous tubular reactor

The present invention relates to a polysilicon production apparatus. The apparatus includes: a horizontal reaction tube positioned in an insulated tube and having an inlet port through which gaseous raw materials including silicon-containing reactant gases and a reducing gas are supplied, an outlet port through which residual gases exit, a reaction surface with which the gaseous raw materials come into contact, and a plurality of bottom openings through which molten polysilicon produced by the reactions of the gaseous raw materials is discharged; one or more internal structures placed in the horizontal reaction tube to provide additional reaction surfaces; and first heating means adapted to heat the reaction surface of the horizontal reaction tube. The present invention also relates to a method for the production of polysilicon using the apparatus.

Device for manufacturing polysilicon using horizontal reactor and method for manufacturing same

The present invention relates to a method for producing trichlorosilane. The method includes dispersing metal silicon particles in liquid silane-based compounds containing tetrachlorosilane and optionally reacting the metal silicon particles with hydrogen chloride in the presence of hydrogen gas.

Method for producing trichlorosilane

Growing community of inventors

Daejeon, South Korea

Eunsu Jang