Samsung Electronics Co., Ltd.

Eunseok Shin

Junghwan Choi

Hyunyoon Cho

Youngdon Choi

Junyoung Park

Jindo Byun

Joohwan Kim

Hyunsub Rie

Jaewoo Park

Myoungbo Kwak

Woochul Jung

Changsoo Yoon

Sanghun Lee

Jeonghyu Yang

Jinwook Lee

Jaeduk Han

Hyuntae Kim

Garam Kim

Junhan Choi

Sunjae Lim

Jungho Ko

A transmitter configured to receive first to N-th data in parallel and sequentially output the first to N-th data in response to first to N-th clock signals having different phases from each other, where N is an integer of at least 2, the transmitter including first to N-th data selectors including a first data selector and a second data selector in correspondence to the first to N-th data, each of the first to N-th data selectors being configured to perform a logical operation on one of the first to N-th data and the first to N-th clock signals and output a plurality of data selection signals, a first pre-driver in correspondence to at least two data selectors among the first to N-th data selectors, the first pre-driver being configured to receive the plurality of data selection signals from the at least two data selectors.

Transmitter, memory device and semiconductor device including the transmitter

A parallel-to-serial converter includes first to fourth input nodes configured to receive first to fourth data input signals, respectively, and an output node configured to output a data output signal. First to fourth logic circuits are provided, which are configured to electrically couple respective ones of the first to fourth input nodes one-at-a-time to the output node, in synchronization with first to fourth clock signals. The first logic circuit includes a first input circuit, a second input circuit, and an output circuit electrically coupled to the first and second input circuits. The output circuit includes a first pull-up transistor and a first pull-down transistor having drain terminals coupled to the output node, a second pull-up transistor connected between a source terminal of the first pull-up transistor and a first power supply node, and a second pull-down transistor connected between a source terminal of the first pull-down transistor and a second power supply node.

Semiconductor devices having parallel-to-serial converters therein

A semiconductor device includes a phase splitter configured to output a plurality of clock signals having different phases by using a plurality of external clock signals having different phases, a plurality of code generators configured to receive a pair of selection clock signals determined from the plurality of clock signals and to output a phase code corresponding to a phase difference error between the pair of selection clock signals, and a delay circuit configured to at least partly simultaneously adjust at least two of a rising edge and a falling edge of each of the plurality of external clock signals with reference to the phase code during a lock time.

Semiconductor device

A receiver receiving a multi-level signal includes a sample and hold circuit, first and second analog-to-digital converting circuits, and a digital-to-analog converting circuit. The sample and hold circuit generates a sample data signal by sampling and holding an input data signal. The first analog-to-digital converting circuit generates a first bit of output data based on the input data signal and a first selection reference voltage among a plurality of reference voltages. The digital-to-analog converting circuit selects at least one additional selection reference voltage from among the plurality of reference voltages based on the first bit of the output data. The second analog-to-digital converting circuit generates at least one additional bit of the output data based on the sample data signal and the at least one additional selection reference voltage.

Receiver with pipeline structure for receiving multi-level signal and memory device including the same

A parallel-to-serial interface circuit includes an equalizer to delay odd data by a half period and sequentially generate odd pre data, odd main data, and odd post data, and delay even data by a half period and sequentially generate even pre data, even main data, and even post data, a final parallel-to-serial converter to sequentially and alternately select the even pre data and the odd pre data to generate pre data, sequentially and alternately select inverted odd main data and inverted even main data to generate inverted main data, and sequentially and alternately select the even post data and the odd post data to generate post data, and a driver to drive the pre data to generate a pre data level, drive the inverted main data to generate an inverted main data level, and drive the post data to generate a post data level.

Parallel-to-serial interface circuit and transmission device having the same

A receiver that receives a multi-level signal includes a pre-amplifier circuit, a slicer circuit and a decoder circuit. The pre-amplifier circuit generates a plurality of intermediate data signals based on an input data signal and a plurality of reference voltages. The slicer circuit generates a plurality of decision signals based on the plurality of intermediate data signals and a clock signal. The decoder circuit generates output data based on the plurality of decision signals. The pre-amplifier circuit includes a first circuit and a second circuit. The first circuit generates one of the plurality of intermediate data signals based on the input data signal and one of the plurality of reference voltages, and has a first structure. The second circuit generates another one of the plurality of intermediate data signals based on the input data signal and another one of the plurality of reference voltages, and has a second structure different from the first structure.

Receiver for receiving multi-level signal and memory device including the same

A transmitter circuit that receives parallel signals and outputs a serial signal in response to the parallel signals may include; a clock generator generating first clock signals having different respective phases, a multiplexer including selection circuits respectively configured to selectively provide at least two of the parallel signals to an output node in response to at least two of the first clock signals, and an output driver generating the serial signal by amplifying a signal at the output node.

Transmitter circuit and method of operating same

A transmitter circuit includes a clock generator configured to generate a plurality of clock signals having different phases, and a plurality of selection circuits configured to receive a plurality of parallel data signals and output a serial data signal on an output node based on the plurality of clock signals and the received plurality of parallel data signals. Each of the plurality of selection circuits includes a data multiplexer configured to generate a plurality of data selection signals based on the received one of the plurality of parallel data signals and the plurality of clock signals; a control signal generator configured to generate first and second control signals based on the plurality of data selection signals; and an output driver connected to the output node, and configured to precharge the output node based on the first control signal or discharge the output node based on the second control signal.

Transmitter circuit including selection circuit, and method of operating the selection circuit

A voltage regulator and a semiconductor memory device having the same are disclosed. The voltage regulator includes an amplifier configured to amplify a difference between a reference voltage and a feedback voltage to generate an amplifier output voltage, a voltage feedback unit connected between an output supply voltage generation node and a ground voltage and configured to generate the feedback voltage, a first transfer gate unit connected between an input supply voltage and the voltage generation node and driven in response to the amplifier output voltage to provide first current, a current load replica unit connected between the voltage generation node and the ground voltage and configured to consume the first current, and a transfer unit connected between the input supply voltage and the voltage generation node and driven in response to the amplifier output voltage when the current load unit performs an operation, to provide second current.

Voltage regulator and semiconductor memory device having the same

A delay circuit for a clock signal includes a first signal generator, a first inverting circuit, a second signal generator and a second inverting circuit. The first signal generator is configured to generate a plurality of first switching signals based on a delay code. The first inverting circuit includes a plurality of first inverters that are selectively turned on in response to the plurality of first switching signals, respectively, and is configured to adjust a first delay time for both of a first edge and a second edge of the clock signal. The second signal generator is configured to generate a plurality of second switching signals based on a duty code. The second inverting circuit includes a plurality of second pull-up units and a plurality of second pull-down units, respective ones of the plurality of second pull-up units or respective ones of the plurality of second pull-down units are selectively turned on in response to respective ones of the plurality of second switching signals. The second inverting circuit is configured to adjust a second delay time for the first edge, the second edge, or both of the first edge and the second edge of the clock signal.

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Seoul, South Korea

Eunseok Shin